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Numéro de référence | MA2B001 | ||
Description | Silicon planar type trigger device | ||
Fabricant | Panasonic | ||
Logo | |||
1 Page
Trigger Devices
MA2B001
Silicon planar type trigger device
Thyristor TRIAC trigger circuit
I Features
• Satisfactory symmetry of VBO
• Large VO and small IBO
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Average total power dissipation
Peak current*1
Operating ambient temperature*2
P(AV)
IPM
Topr
150
2.0
100
Storage temperature
Tstg −55 to +125
Note) *1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz
*2 : Maximum ambient temperature during operation
Unit
mW
A
°C
°C
φ 0.56 max.
Unit : mm
φ 1.95 max.
DO-35 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Breakover current
Breakover voltage*1
Output voltage*1
Temperature coefficient of
breakover voltage
IBO
VBO
VO
T.C.(VBO)
V = VBO
I = IBO
50 µA
28 36 V
4.0 7.0
V
0.1 %/°C
Breakover voltage deviation*2
∆VBO
3.5 V
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Measurement of VBO and VO
*2 : Symmetry of VBO
VBO
30 kΩ 70 kΩ
100 Vrms
0.068 µF
VO
20 Ω
VBO'
VBO
1
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Pages | Pages 2 | ||
Télécharger | [ MA2B001 ] |
No | Description détaillée | Fabricant |
MA2B001 | Silicon planar type trigger device | Panasonic |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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