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Panasonic - Silicon planar type trigger device

Numéro de référence MA2B001
Description Silicon planar type trigger device
Fabricant Panasonic 
Logo Panasonic 





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MA2B001 fiche technique
Trigger Devices
MA2B001
Silicon planar type trigger device
Thyristor TRIAC trigger circuit
I Features
Satisfactory symmetry of VBO
Large VO and small IBO
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Average total power dissipation
Peak current*1
Operating ambient temperature*2
P(AV)
IPM
Topr
150
2.0
100
Storage temperature
Tstg 55 to +125
Note) *1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz
*2 : Maximum ambient temperature during operation
Unit
mW
A
°C
°C
φ 0.56 max.
Unit : mm
φ 1.95 max.
DO-35 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Breakover current
Breakover voltage*1
Output voltage*1
Temperature coefficient of
breakover voltage
IBO
VBO
VO
T.C.(VBO)
V = VBO
I = IBO
50 µA
28 36 V
4.0 7.0
V
0.1 %/°C
Breakover voltage deviation*2
VBO
3.5 V
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Measurement of VBO and VO
*2 : Symmetry of VBO
VBO
30 k70 k
100 Vrms
0.068 µF
VO
20
VBO'
VBO
1

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