DataSheetWiki


M68AR512D fiches techniques PDF

ST Microelectronics - 8 Mbit 512K x16 1.8V Asynchronous SRAM

Numéro de référence M68AR512D
Description 8 Mbit 512K x16 1.8V Asynchronous SRAM
Fabricant ST Microelectronics 
Logo ST Microelectronics 





1 Page

No Preview Available !





M68AR512D fiche technique
M68AR512D
8 Mbit (512K x16) 1.8V Asynchronous SRAM
FEATURES SUMMARY
s SUPPLY VOLTAGE: 1.65 to 1.95V
s 512K x 16 bits SRAM with OUTPUT ENABLE
s EQUAL CYCLE and ACCESS TIMES: 70ns
s SINGLE BYTE READ/WRITE
s LOW STANDBY CURRENT
s LOW VCC DATA RETENTION: 1.0V
s TRI-STATE COMMON I/O
s AUTOMATIC POWER DOWN
s DUAL CHIP ENABLE for EASY DEPTH
EXPANSION
Figure 1. Packages
BGA
TFBGA48 (ZB)
6 x 7mm
BGA
TFBGA48 (ZB)
8 x 10mm
October 2002
1/19

PagesPages 19
Télécharger [ M68AR512D ]


Fiche technique recommandé

No Description détaillée Fabricant
M68AR512D 8 Mbit 512K x16 1.8V Asynchronous SRAM ST Microelectronics
ST Microelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche