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Numéro de référence | M68732EH | ||
Description | SILICON MOS FET POWER AMPLIFIER / 520-530MHz / 6.5W / FM PORTABLE RADIO | ||
Fabricant | Mitsubishi | ||
Logo | |||
MITSUBISHI RF POWER MODULE
M68732EH
SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO
OUTLINE DRAWING
30±0.2
26.6±0.2
21.2±0.2
Dimensions in mm
BLOCK DIAGRAM
2-R1.5±0.1
23
12
0.45
6±1
13.7±1
18.8±1
23.9±1
3
5
4
14
5
PIN:
1 Pin : RF INPUT
2 VGG : GATE BIAS SUPPLY
3 VDD : DRAIN BIAS SUPPLY
4 PO : RF OUTPUT
5 GND: FIN
H46
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
Parameter
VDD Supply voltage
VGG Gate bias voltage
Pin Input power
PO Output power
TC (OP) Operation case temperature
Tstg Storage temperature
Note. Above parameters are guaranteed independently.
Conditions
VGG≤3.5V, ZG=ZL=50Ω
f=520-530MHz, ZG=ZL=50Ω
f=520-530MHz, ZG=ZL=50Ω
f=520-530MHz, ZG=ZL=50Ω
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted)
Symbol
Parameter
Test conditions
f
PO
ηT
2fO
ρin
-
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Stability
VDD=7.2V,
VGG=3.5V,
Pin=50mW
ZG=50Ω, VDD=4-9.2V,
Load VSWR<4:1
- Load VSWR tolerance
VDD=9.2V, Pin=50mW,
PO=6.5W (VGG adjust), ZL=20:1
Note. Above parameters, ratings, limits and test conditions are subject to change.
Ratings
9.2
4
70
10
-30 to +100
-40 to +110
Unit
V
V
mW
W
°C
°C
Limits
Min Max
520 530
6.5
35
-25
4
No parasitic oscillation
No degradation or
destroy
Unit
MHz
W
%
dBc
-
-
-
Nov. ´97
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Pages | Pages 2 | ||
Télécharger | [ M68732EH ] |
No | Description détaillée | Fabricant |
M68732EH | SILICON MOS FET POWER AMPLIFIER / 520-530MHz / 6.5W / FM PORTABLE RADIO | Mitsubishi |
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