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PDF M5M5Y816WG-85HI Data sheet ( Hoja de datos )
| Número de pieza | M5M5Y816WG-85HI | |
| Descripción | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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2001.05.22 Ver. 0.1
M5M5Y816WG
MITSUBISHI LSIs
-70HI, -85HI
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Those are summarized in the part name table below.
DESCRIPTION
FEATURES
The M5M5Y816 is a f amily of low v oltage 8-Mbit static RAMs
organized as 524288-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.18µm CMOS technology .
The M5M5Y816 is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5Y816WG is packaged in a CSP (chip scale package),
with the outline of 7.5mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It giv es the best solution f or
a compaction
of mounting area as well as f lexibility of wiring pattern of printed
circuit boards.
- Single 1.65~2.3V power supply
- Small stand-by current: 0.5µA (2.0V, ty p.)
- No clocks, No ref resh
- Data retention supply v oltage =1.3V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1, S2, BC1 and BC2
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prev ents data contention in the I/O bus
- Process technology : 0.18µm CMOS
- Package: 48ball 7.5mm x 8.5mm CSP
Version,
Operating
temperature
Part name
Power
Supply
Access time
max.
Stand-by c urrent (µA)
* Ty pical
Ratings (max.)
25°C 40°C 25°C 40°C 70°C 85°C
Activ e
current
Icc1
(2.3V, max)
I-version
-40 ~ +85°C
M5M5Y816WG -70HI 1.65 ~ 2.3V
M5M5Y816WG -85HI 1.65 ~ 2.3V
70ns
85ns
30mA
0.5 1
2
4
15 30
(10MHz)
3mA
(1MHz)
PIN CONFIGURATION
(TOP VIEW)
* Typical parameter indicates the value for the center
of distribution at 2.0V, and not 100% tested.
1 23 456
A BC1 OE A0 A1 A2 S2
B DQ16 BC2 A3 A4 S1 DQ1
C DQ14 DQ15 A5
A6 DQ2 DQ3
D GND DQ13 A17 A7 DQ4 VCC
E VCC
NCor
DQ12 G N D *
A16
DQ5 GND
F DQ11 DQ10 A14 A15 DQ7 DQ6
G DQ9 N.C. A12 A13 W DQ8
H A18 A8 A9 A10 A11 N.C.
Pin Function
A0 ~ A18 Address input
DQ1 ~ DQ16 Data input / output
S1 Chip select input 1
S2 Chip select input 2
W Write control input
OE Output enable input
BC1
BC2
Lower By te (DQ1 ~ 8)
Upper By te (DQ9 ~ 16)
Vcc Power supply
GND Ground supply
Outline: 48F7Q
NC: No Connection
*Don't connect E3 ball to v oltage lev el more than 0V
MITSUBISHI ELECTRIC
1
1 page  
2001.05.22 Ver. 0.1
M5M5Y816WG
MITSUBISHI LSIs
-70HI, -85HI
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
(4)TIMING DIAGRAMS
Read cycle
tCR
A 0~18
ta(A)
tv (A)
BC1 ,BC2
(Note3)
ta(BC1) or ta(BC2)
tdis (BC1) or tdis (BC1)
(Note3)
S1
(Note3)
ta(S1)
tdis (S1)
(Note3)
S2
(Note3)
OE
W = "H" lev el
(Note3)
DQ1~16
Write cycle ( W control mode )
ta(S2)
ta (OE)
ten (OE)
ten (BC1)
ten (BC2)
ten (S1)
ten (S2)
tCW
tdis (S2)
tdis (OE)
VALID DATA
(Note3)
(Note3)
A 0~18
BC1,BC2
S1
S2
(Note3)
(Note3)
(Note3)
tsu (BC1) or tsu(BC2)
tsu (S1)
tsu (S2)
(Note3)
(Note3)
(Note3)
OE
W
DQ1~16
tsu (A)
tsu (A-WH)
tw (W)
tdis (W)
tdis(OE)
DATA IN
STABLE
tsu (D) th (D)
trec (W)
ten(OE)
ten (W)
MITSUBISHI ELECTRIC
5
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