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M5M5255FP-45XL fiches techniques PDF

Mitsubishi - 262 /144-BIT (32 /768-WORD BY 8-BIT) CMOS STATIC RAM

Numéro de référence M5M5255FP-45XL
Description 262 /144-BIT (32 /768-WORD BY 8-BIT) CMOS STATIC RAM
Fabricant Mitsubishi 
Logo Mitsubishi 





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M5M5255FP-45XL fiche technique
'97.4.7
MITSUBISHI LSIs
M5M5255DP,FP -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized
as 32,768-words by 8-bits which is fabricated using
high-performance 3 polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough for battery back-up application. It is ideal for the memory
systems which require simple interface.
FEATURE
Type
M5M5255DP, FP-45LL
M5M5255DP, FP-55LL
M5M5255DP, FP-70LL
M5M5255DP, FP-45XL
M5M5255DP, FP-55XL
M5M5255DP, FP-70XL
Access Power supply current
time Active Stand-by
(max) (max) (max)
45ns
55ns
70ns
45ns
55ns
70ns
55mA
(Vcc=5.5V)
20µA
(Vcc=5.5V)
5µA
(Vcc=5.5V)
0.05µA
(Vcc=3.0V,
Typical)
•Single +5V power supply
•No clocks, no refresh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capability
•Simple memory expantion by /S1, S2
•Common Data I/O
•Battery backup capability
•Low stand-by current··········0.05µA(typ.)
PIN CONFIGURATION (TOP VIEW)
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 Vcc
27 /W
26 A13
25 A8
24 A9
23 A11
22 S2
21 A10
20 /S1
19 DQ8
18 DQ7
17 DQ6
16 DQ5
15 DQ4
Outline 28P4 (DP)
28P2W-C (DFP)
PACKAGE
M5M255DP
M5M5255DFP
: 28 pin 600 mil DIP
: 28 pin 450 mil SOP
APPLICATION
Small capacity memory units
MITSUBISHI
ELECTRIC
1

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