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Mitsubishi - EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM

Numéro de référence M5M467805BTP-6
Description EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
Fabricant Mitsubishi 
Logo Mitsubishi 





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M5M467805BTP-6 fiche technique
(Rev. 1.1)
MITSUBISHI LSIs
M5M467405/465405BJ,BTP -5,-6,-5S,-6S
M5M467805/465805BJ,BTP -5,-6,-5S,-6S
M5M465165BJ,BTP -5,-6,-5S,-6S
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
DESCRIPTION
The M5M467405/465405BJ,BTP is organized 16777216-word by 4-bit, M5M467805/465805BJ,BTP is organized 8388608-word by
8-bit, and M5M465165BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS
process, and are suitable for large-capacity memory systems with high speed and low power dissipation.
The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked
capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system
densities.
FEATURES
Type name
RAS
CAS Address OE Cycle
access access access access
time
time time
time
time
Power
dissipa-
tion
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW)
M5M467405BXX-5,5S
M5M467805BXX-5,5S
50
13
25
13
84 300
M5M467405BXX-6,6S
M5M467805BXX-6,6S
60
15
30
15 104 250
M5M465405BXX-5,5S
M5M465805BXX-5,5S
50
13
25
13
84 390
M5M465405BXX-6,6S
M5M465805BXX-6,6S
60
15
30
15 104 325
XX=J,TP
Type name
M5M465165BXX-5,5S
M5M465165BXX-6,6S
RAS
CAS Address OE
access access access access
time
time time
time
Cycle
time
Power
dissipa-
tion
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW)
50 13 25 13 84 420
60 15 30 15 104 390
Standard 32 pin SOJ, 32 pin TSOP (M5M467405Bxx/M5M465405Bxx/M5M467805Bxx/M5M465805Bxx)
Standard 50 pin SOJ, 50 pin TSOP (M5M465165Bxx)
Single 3.3 ± 0.3V supply
Low stand-by power dissipation
1.8mW (Max)
LVCMOS input level
Low operating power dissipation
M5M467405Bxx-5,5S / M5M467805Bxx-5,5S
360.0mW (Max)
M5M467405Bxx-6,6S / M5M467805Bxx-6,6S
324.0mW (Max)
M5M465405Bxx-5,5S / M5M465805Bxx-5,5S
468.0mW (Max)
M5M465405Bxx-6,6S / M5M465805Bxx-6,6S
432.0mW (Max)
M5M465165Bxx-5,5S
504.0mW (Max)
M5M465165Bxx-6,6S
468.0mW (Max)
Self refresh capability*
Self refresh current
400µA (Max)
EDO mode , Read-modify-write, CAS before RAS refresh, Hidden refresh capabilities
Early-write mode , OE and W to control output buffer impedance
All inputs, outputs LVTTL compatible and low capacitance
* :Applicable to self refresh version(M5M467405/465405/467805/465805/465165BJ,BTP-5S,-6S:option) only
ADDRESS
Part No.
Row Add Col Add
Refresh
Refresh Cycle
Normal S-version
RAS Only Ref,Normal R/W 8192/64ms 8192/128ms
M5M467405Bxx A0-A12 A0-A10
CBR Ref,Hidden Ref
4096/64ms 4096/128ms
M5M465405Bxx A0-A11
A0-A11
RAS Only Ref,Normal R/W
CBR Ref,Hidden Ref
4096/64ms
4096/128ms
RAS Only Ref,Normal R/W 8192/64ms 8192/128ms
M5M467805Bxx A0-A12 A0-A9
CBR Ref,Hidden Ref
4096/64ms 4096/128ms
M5M465805Bxx A0-A11
A0-A10
RAS Only Ref,Normal R/W
CBR Ref,Hidden Ref
4096/64ms
4096/128ms
M5M465165Bxx A0-A11 A0-A9
RAS Only Ref,Normal R/W
CBR Ref,Hidden Ref
4096/64ms
4096/128ms
APPLICATION
Main memory unit for computers, Microcomputer memory, Refresh memory for CRT
1
MITSUBISHI
Jun. 1999
ELECTRIC

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