M5M29GT161BWG Datasheet PDF - Mitsubishi
| Part Number | M5M29GT161BWG | |
| Description | 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY | |
| Manufacturers | Mitsubishi | |
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MITSUBISHI LSIs
M5M29GB/T161BWG
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
DESCRIPTION
The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for
mobile and personal computing, and communication products. The M5M29GB/T161BWG are fabricated by CMOS technology for the
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6x8-balls CSP (0.75mm ball
pitch) .
FEATURES
Organization
.................................1048,576 word x 16bit
(M5M29GB/T161BWG)
Supply voltage ...................................... VCC = 2.7~3.6V
Access time
.............................. 90ns (Max.)
Power Dissipation
R(PArefoategdrraAmu/tEormaasetic..P..o..w..e..r...s...a....v..i..n....g...)...................................1025.6343mmµWWW
(Max. at
(typ.)
(Max.)
5MHz)
Standby
Deep power
down
.................................
mode .......................
0.33µW
0.33µW
(typ.)
(typ.)
Auto program for Bank(I)
Program Time .................................4ms (typ.)
Program Unit
(Byte Program) .........................1word
(Page Program) .........................128word
Auto program for Bank(II)
Program Time
Program Unit
.................................
.................................
4ms (typ.)
128word
Auto Erase
Erase time
................................. 40 ms (typ.)
Erase Unit
Bank(I)
PBaoroatmBeltoecrkBlo.c..k................................
16Kword
16Kword
x
x
1
7
Bank(II) Main Block ......................32Kword x 28
Program/Erase cycles .........................................100Kcycles
Boot Block
M5M29GB161BWG ........................ Bottom Boot
M5M29GT161BWG ........................ Top Boot
Other Functions
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
Package
7mm x 8.5mm CSP (Chip Scale Package)
- 6 x 8 balls, 0.75mm ball pitch
APPLICATION
Digital Cellular Phone
Telecommunication
Mobile Computing Machine
PDA (Personal Digital Assistance)
Car Navigation System
Video Game Machine
PIN CONFIGURATION (TOP VIEW)
8.5mm
6 A13 A11 A8 WP2# WP1# A19 A7 A4
5 A14 A10 WE# RP# A18 A17 A5 A2
4 A15 A12 A9 NC NC A6 A3 A1
3 A16 D14 D5 D11 D2 D8 CE# A0
2 NC D15 D6 D12 D3 D9
D0 GND
1 GND D7 D13 D4 VCC D10 D1 OE#
INDEX
AB CD EFG H
M5M29GB/T161BWG
CSP(0.75mm ball pitch):48FJA
16-bit version NC : NO CONNECTION
1
Sep.1999. Rev4.0
|
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MITSUBISHI LSIs
M5M29GB/T161BWG
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
Mitsubishi 16M Flash Memory Type name
M 5 M 29G T 160B WG
Operating Voltage :
29G : 2.7 - 3.6V
Standard / BGO Type
29W : 1.65 - 2.2V
Standard / BGO Type
Boot Block :
T : Top Boot
B : Bottom Boot
Density/Write Protect/
Word Organizetion:
160B : 16M WP1#, x8/x16
161B : 16M WP1# & WP2#, x16
Package :
VP : 48pin TSOP(I) 12mm x 20mm (Nomal Pinout)
WG: CSP Ball Pitch 0.75mm,6x8 array, 7mm x 8.5mm
5 Sep.1999. Rev4.0
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for M5M29GT161BWG electronic component. |
| Information | Total 23 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ M5M29GT161BWG.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| M5M29GT161BWG | The function is 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY. Mitsubishi | |
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