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PDF M5M29F25611VP Data sheet ( Hoja de datos )
| Número de pieza | M5M29F25611VP | |
| Descripción | MORE THAN 16 /057 SECTORS (271 /299 /072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
DESCRIPTION
The MITSUBISHI M5M29F25611 is a CMOS Flash Memory
with AND type multi-level memory cells.
It has fully automatic programming and erase capabilities
with a single 3.3V power supply.
The functions are controlled by simple external commands.
To fit the I/O card applications, the unit of programming and
erase is as small as (2048+64) bytes.
Available sectors of M5M29F25611 are more than
16,057(98% of all sector address) and less than 16,384
sectors.
FEATURES
On-board single power supply(Vcc) :
Vcc=3.0V to 3.6V
Organization
AND Flash Memory :
(2048+64)bytes x (More than 16,057 sectors)
Data register : (2048+64)bytes
Multi-level memory cell:
2bit / per memory cell.
Automatic programming :
Sector program time : 2.5 ms typ.
System bus free
Address,data latch function
Internal automatic program verify function
Status data polling function
Automatic erase :
Single sector erase time : 1.0 ms typ.
System bus free
Internal automatic erase verify function
Status data polling function
Erase mode :
Single sector erase ((2048+64)byte unit)
Fast access time :
Serial read First access time : 50µs max.
Serial access time : 50ns max.
Low power dissipation :
ICC2 = 30mA typ. / 50mA max. (Read)
ISB2 = 30µA typ. / 50µA max. (Standby)
ICC3 = 20mA typ. / 40mA max. (Program)
ICC4 = 20mA typ. / 40mA max. (Erase)
ISB3 = 1µA typ. / 10µA max. (Deep standby)
Package : 48pin-TSOP(I) (12.0 x 20.0mm2)
PIN CONFIGURATION(TOP VIEW)
GND
Vcc
DQ0
DQ1
DQ2
DQ3
GND
NC
NC
NC
NC
NC
NC
NC
NC
Vcc
DQ4
DQ5
DQ6
DQ7
SC
GND
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
M5M29F25611VP
Outline 48P3R-B
48 GND
47 GND
46 NC
45
44 NC
43
42 NC
41 Vcc
40 NC
39 NC
38 NC
37 NC
36 NC
35 NC
34 NC
33 NC
32 GND
31 R/
30
29 DU
28
27 NC
26 Vcc
25 GND
Pin Description
Pin name
DQ0-7
Vcc note1
GND note1
R/
SC
NC
DU note2
Function
Input / Output
Chip enable
Output enable
Write enable
Command data enable
Power supply
Ground
Ready /
Reset
Serial clock
No connect
Don't Use
Note1:All Vcc and GND pins should be connected to
a common power supply and a ground, respectively.
Note2:Pin should not be connected to anything.
1 Rev.2.3.1 2001.2.2
1 page  
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Command Definition (note 1,2)
First
Serial read(1)
Command
Without CA
Bus
cycles
3
Operation
mode (note 3)
Write
Data
in
00H
With CA
3+2h(note6)
Serial read(2)
3
Read identifier codes
Data Recovery Read
1
1
Auto Erase
Single sector
4
Auto Program
Program (1) Without CA (note 7)
4
With CA (note 7)
4+2h(note6)
Program (2) (note 10)
4
Program (3) (control bytes) (note 7)
4
Program (4)
Reset
Clear status register
Data Recovery Write
Without CA (note 7)
4
With CA (note 7) 4+2h(note6)
1
1
4
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
00H
F0H
90H
01H
20H
10H
10H
1FH
0FH
11H
11H
FFH
50H
12H
Operation
mode
Write
Write
Write
Read
Read
Write
Write
Write
Write
Write
Write
Write
-
-
Write
Second cycle
Data
in out
SA(1) (note 4) -
SA(1) (note 4)
SA(1) (note 4)
-
-
- ID (note8,9)
- Recovery Data
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4)
-
-
-
--
SA(1) (note 4) -
Serial read(1)
Serial read(2)
Auto Erase
Auto Program
Command
Bus
cycles
Without CA
3
With CA
3+2h(note6)
3
Single sector
4
Program (1)
Without CA (note 7)
4
With CA (note 7) 4+2h(note6)
Program (2) (note 10)
4
Program (3) (control bytes) (note 7)
4
Program (4)
Without CA (note 7)
4
With CA (note 7) 4+2h(note6)
Data Recovery Write
4
Third cycle
Operation
mode
Data
in
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Fourth cycle
Operation
mode
Data
in
--
Write
CA(1) (note5)
--
Write
B0H (note11)
Write
Write
Write
Write
Write
Write
40H (note11,12)
CA(1) (note5)
40H (note11,12)
40H (note11,12)
CA(1) (note5)
40H (note11,12)
Write 40H (note11,12)
Serial read(1)
Auto Program
Command
With CA
Program (1)
Program (4)
With CA (note 7)
With CA (note 7)
Bus
cycles
3+2h(note6)
4+2h(note6)
4+2h(note6)
Fifth cycle
Operation
mode
Write
Data
in
CA(2) (note5)
Write CA(2) (note5)
Write CA(2) (note5)
Sixth cycle
Operation
mode
-
Data
in
-
Write 40H (note11,12)
Write 40H (note11,12)
Notes : 1. Commands, sector address and column address are latched at rising edge of pulses.
Program data is latched at rising edge of SC pulses.
2. The chip is in the read status register mode when
is set to VIHR first time after the power up.
3. Refer to the command read and write mode in mode selection table (P.4).
4. SA(1)=Sector address (SA0 - SA7), SA(2)=Sector address (SA8 - SA13).
5. CA(1)=Column address (CA0 - CA7), CA(2)=Column address (CA8 - CA11).(0≤CA11 - CA0≤83FH)
6. The variable h is the input number of times of set of CA(1) and CA(2).(1≤h≤2048+64)
Set of CA(1) and CA(2) can be input not only one time but free times.
7. By using program(1) and (3), data can additionally be programmed for each sector before erase.
8. ID=Identifier code; Manufacturer code (1CH), Device code (6CH).
9. The manufacturer identifier code is output when
is low and the device identifier code is output when
is high.
10. Before program (2) operations, data in the programmed sector must be erased.
11. No commands can be written during auto program and erase (when the R/ pin outputs a VOL).
12. The fourth cycle or sixth cycle of the auto program comes after the program data input is complete.
5 Rev.2.3.1 2001.2.2
5 Page 
Status Transition
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Deep
Standby
Vcc
Power off
Column address
input
CA(1)
CA(2)
CA(1)',CA(2)'
SC
00H / F0H
FFH
Read (1), (2) SA(1), SA(2) Sector address
setup
input
, SC
Read(1), (2)
Standby
11
90H
FFH
ID Read set up
,
ID Read
20H
FFH
Sector Erase
set up
SA(1), SA(2)
Sector address
input
Erase finish
B0H
Erase start
Output
disable
10H/
11H
Program (1),(4)
set up
FFH
SA(1)
SA(2)
CA(1)
CA(2)
Column address
input
CA(1)',CA(2)'
SC,
PD(m)~
PD(m+j)
PD0 ~ PD2111
Sector address
Program data 40H
input
SC,
input
Program finish
Program
start
1FH/
0FH
SA(1)
Program (2),(3) SA(2)
set up
FFH
(note4) PD0 ~ PD2111
Sector address
input
SC,
Program data
input
Program finish
40H
Status register clear 50H
(note2)
(note2) FFH
Program
start
BUSY
Status
register
read
Status
register
read
Status
register
read
Program or
Erase Error
Status
register
read
ERROR
Error
Standby
(note3)
Error
Output
disable
(note1)
01H
(note1)
12H
FFH
Data
Recovery Read
set up
,SC Data
Recovery Read
Status register read
Data
Recovery Write
set up
SA(1)
SA(2)
Sector address
input
40H
Note 1: (01H)/(12H) Data Recovery Read/Write can be used only for Program(1),(2),(3),(4) Errors.
2: When Reset is done by CE or FFH, Error Status Flag is cleared.
3: When Error Standby, Icc3 level is current.
4: When Program(3) mode, input data is PD2048 ~ PD2111.
Rev.2.3.1 2001.2.2
11 Page | ||
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