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Datasheet M59DR008-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
M59 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | M5913 | COMBINED SINGLE CHIP PCM CODEC AND FILTER M5913
COMBINED SINGLE CHIP PCM CODEC AND FILTER
SYNCHRONOUS CLOCKS ONLY AT&T D3/D4 AND CCITT COMPATIBLE TWO TIMING MODES: FIXED DATA RATE MODE 1.536MHz, 1.544MHz, 2.048MHz VARIABLE DATA MODE: 64KHz - 4.096MHz PIN SELECTABLE µ-LAW OR A-LAW OPERATION NO EXTERNAL COMPONENTS FOR SAMPLE-AND-HOLD AND AUT  ST Microelectronics filter | | |
| 2 | M5913B1 | COMBINED SINGLE CHIP PCM CODEC AND FILTER M5913
COMBINED SINGLE CHIP PCM CODEC AND FILTER
SYNCHRONOUS CLOCKS ONLY AT&T D3/D4 AND CCITT COMPATIBLE TWO TIMING MODES: FIXED DATA RATE MODE 1.536MHz, 1.544MHz, 2.048MHz VARIABLE DATA MODE: 64KHz - 4.096MHz PIN SELECTABLE µ-LAW OR A-LAW OPERATION NO EXTERNAL COMPONENTS FOR SAMPLE-AND-HOLD AND AUT ST Microelectronics filter | | |
| 3 | M59330P | LAN Transceiver
M59330P
LAN Transceiver
REJ03F0032-0100Z Rev.1.0 Sep.16.2003
Description
The M59330P is an integrated circuit for two-line LAN transceivers, conforming to J1850 specifications. The chip incorporates bus line anomaly detection functions; anomalous behavior causes the ERR signal  Renesas Technology transceiver | | |
| 4 | M59BW102 | 1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory M59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING
TSOP40 (N) 10 x ST Microelectronics data | | |
| 5 | M59BW10225N1T | 1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory M59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING
TSOP40 (N) 10 x ST Microelectronics data | | |
| 6 | M59BW102N | 1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory M59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING
TSOP40 (N) 10 x ST Microelectronics data | | |
| 7 | M59DR008 | 8 Mbit 512Kb x16 / Dual Bank / Page Low Voltage Flash Memory M59DR008E M59DR008F
8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory
PRODUCT PREVIEW
s
SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V: for Program, Erase and Read – VPP = 12V: optional Supply Voltage for fast Program and Erase
s
ASYNCHRONOUS PAGE MODE READ
BGA
– Page Width: 4 word ST Microelectronics data | |
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