|
|
PDF M58LW032D Data sheet ( Hoja de datos )
| Número de pieza | M58LW032D | |
| Descripción | 32 Mbit 4Mb x8 / 2Mb x16 / Uniform Block 3V Supply Flash Memory | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de M58LW032D (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
M58LW032D
32 Mbit (4Mb x8, 2Mb x16, Uniform Block)
3V Supply Flash Memory
FEATURES SUMMARY
s WIDE x8 or x16 DATA BUS for HIGH
BANDWIDTH
s SUPPLY VOLTAGE
– VDD = VDDQ = 2.7 to 3.6V for Program, Erase
and Read operations
s ACCESS TIME
– Random Read 90ns,110ns
– Page Mode Read 90ns/25ns, 110ns/25ns
s PROGRAMMING TIME
– 16 Word Write Buffer
– 12µs Word effective programming time
s 32 UNIFORM 64 KWord/128KByte MEMORY
BLOCKS
s ENHANCED SECURITY
– Block Protection/ Unprotection
– VPEN signal for Program Erase Enable
– 128 bit Protection Register with 64 bit Unique
Code in OTP area
s PROGRAM and ERASE SUSPEND
s 128 bit PROTECTION REGISTER
s COMMON FLASH INTERFACE
s 100, 000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW032D: 0016h
Figure 1. Packages
TSOP56 (N)
14 x 20 mm
TBGA
TBGA64 (ZA)
10 x 13 mm
September 2003
1/51
1 page  
M58LW032D
SUMMARY DESCRIPTION
The M58LW032D is a 32 Mbit (4Mb x 8 or 2Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single low voltage (2.7V to 3.6V)
core supply.
The memory is divided into 32 blocks of 1Mbit that
can be erased independently so it is possible to
preserve valid data while old data is erased. Pro-
gram and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a Program or Erase operation can be detected and
any error conditions identified in the Status Regis-
ter. The command set required to control the
memory is consistent with JEDEC standards.
The Write Buffer allows the microprocessor to pro-
gram from 1 to 16 Words in parallel, both speeding
up the programming and freeing up the micropro-
cessor to perform other work. A Word Program
command is available to program a single word.
Erase can be suspended in order to perform either
Read or Program in any other block and then re-
sumed. Program can be suspended to Read data
in any other block and then resumed. Each block
can be programmed and erased over 100,000 cy-
cles.
The M58LW032D has several security features to
increase data protection.
s Block Protection, where each block can be
individually protected against program or erase
operations. All blocks are protected during
power-up. The protection of the blocks is non-
volatile; after power-up the protection status of
each block is restored to the state when power
was last removed.
s Program Erase Enable input VPEN, program or
erase operations are not possible when the
Program Erase Enable input VPEN is low.
s 128 bit Protection Register, divided into two 64
bit segments: the first contains a unique device
number written by ST, the second is user
programmable. The user programmable
segment can be protected.
The Reset/Power-Down pin is used to apply a
Hardware Reset to the enabled memory and to set
the device in power-down mode.
The device features an Auto Low Power mode. If
the bus becomes inactive during read operations,
the device automatically enters Auto Low Power
mode. In this mode the power consumption is re-
duced to the Auto Low Power supply current.
The STS signal is an open drain output that can be
used to identify the Program/Erase Controller sta-
tus. It can be configured in two modes: Ready/
Busy mode where a static signal indicates the sta-
tus of the P/E.C, and Status mode where a pulsing
signal indicates the end of a Program or Block
Erase operation. In Status mode it can be used as
a system interrupt signal, useful for saving CPU
time.
The memory is available in TSOP56 (14 x 20 mm)
and TBGA64 (10x13mm, 1mm pitch) packages.
5/51
5 Page 
M58LW032D
sistor. The use of an open-drain output allows the
STS pins from several memories to be connected
to a single pull-up resistor (a Low will indicate that
one, or more, of the memories is busy).
STS is not Low during a reset unless the reset was
applied when the Program/Erase controller was
active.
Program/Erase Enable (VPEN). The Program/
Erase Enable input, VPEN, is used to protect all
blocks, preventing Program and Erase operations
from affecting their data.
Program/Erase Enable must be kept High during
all Program/Erase Controller operations, other-
wise the operations is not guaranteed to succeed
and data may become corrupt.
VDD Supply Voltage. VDD provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
VDDQ Supply Voltage. VDDQ provides the power
supply to the I/O pins and enables all Outputs to
be powered independently from VDD. VDDQ can be
tied to VDD or can use a separate supply.
It is recommended to power-up and power-down
VDD and VDDQ together to avoid any condition that
would result in data corruption.
VSS Ground. Ground, VSS, is the reference for
the core power supply. It must be connected to the
system ground.
VSSQ Ground. VSSQ ground is the reference for
the input/output circuitry driven by VDDQ. VSSQ
must be connected to VSS.
Note: Each device in a system should have
VDD and VDDQ decoupled with a 0.1µF ceramic
capacitor close to the pin (high frequency, in-
herently low inductance capacitors should be
as close as possible to the package). See Fig-
ure 8, AC Measurement Load Circuit.
Table 2. Device Enable
E2 E1
VIL VIL
VIL VIL
VIL VIH
VIL VIH
VIH VIL
VIH VIL
VIH VIH
VIH VIH
Note: For single device operations, E2 and E1 can be connected to VSS.
E0
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
Device
Enabled
Disabled
Disabled
Disabled
Enabled
Enabled
Enabled
Disabled
11/51
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet M58LW032D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| M58LW032 | 32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory | ST Microelectronics |
| M58LW032A | 32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory | ST Microelectronics |
| M58LW032A110N1T | 32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory | ST Microelectronics |
| M58LW032A110N6T | 32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |