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M58CR064D Datasheet دیتاشیت PDF دانلود

دیتاشیت - ST Microelectronics - 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

شماره قطعه M58CR064D
شرح مفصل 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
تولید کننده ST Microelectronics 
آرم ST Microelectronics 


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M58CR064D شرح
M58CR064C, M58CR064D
M58CR064P, M58CR064Q
64 Mbit (4Mb x 16, Dual Bank, Burst )
1.8V Supply Flash Memory
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VDD = 1.65V to 2V for Program, Erase and
Read
– VDDQ = 1.65V to 3.3V for I/O Buffers
– VPP = 12V for fast Program (optional)
s SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode : 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 85, 90, 100, 120ns
s PROGRAMMING TIME
– 10µs by Word typical
– Double/Quadruple Word Program option
s MEMORY BLOCKS
– Dual Bank Memory Array: 16/48 Mbit
– Parameter Blocks (Top or Bottom location)
s DUAL OPERATIONS
– Program Erase in one Bank while Read in
other
– No delay between Read and Write operations
s BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
s SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
s COMMON FLASH INTERFACE (CFI)
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
FBGA
TFBGA56 (ZB)
6.5 x 10mm
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58CR064C: 88CAh
– Bottom Device Code, M58CR064D: 88CBh
– Top Device Code, M58CR064P: 8801h
– Bottom Device Code, M58CR064Q: 8802h
June 2003
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