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M29W102BB fiches techniques PDF

ST Microelectronics - 1 Mbit 64Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

Numéro de référence M29W102BB
Description 1 Mbit 64Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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M29W102BB fiche technique
M29W102BT
M29W102BB
1 Mbit (64Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 50ns
s PROGRAMMING TIME
– 10µs per Word typical
s 5 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 2 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s M28F102 COMPATIBLE
– Pin-out and Read Mode
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W102BT: 0099h
– Bottom Device Code M29W102BB: 0098h
TSOP40 (N)
10 x 14mm
Figure 1. Logic Diagram
VCC
16
A0-A15
16
DQ0-DQ15
W
E M29W102BT
M29W102BB
G
RP
VSS
AI02785
March 2000
1/20

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