M29F040B Datasheet PDF - ST Microelectronics
| Part Number | M29F040B | |
| Description | 4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory | |
| Manufacturers | ST Microelectronics | |
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M29F040B
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 5V ± 10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 45ns
s PROGRAMMING TIME
– 8µs per Byte typical
s 8 UNIFORM 64 Kbytes MEMORY BLOCKS
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E2h
PLCC32 (K)
TSOP32 (N)
8 x 20mm
32
1
PDIP32 (P)
Figure 1. Logic Diagram
VCC
19
A0-A18
8
DQ0-DQ7
W M29F040B
E
G
VSS
AI02900
September 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M29F040B
Table 4. Bus Operations
Operation
E GW
Address Inpu ts
Data
Inputs/Outpu ts
Bus Read
VIL VIL VIH Cell Address
Data Output
Bus Write
VIL VIH VIL Command Address
Data Input
Output Disable
X VIH VIH X
Hi-Z
Standby
VIH X
XX
Hi-Z
Read Manufacturer
Code
VIL
VIL
VIH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
20h
Read Device Code
Note: X = VIL or VIH.
VIL
VIL
VIH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
E2h
Automatic Standby. If CMOS levels (VCC ± 0.2V)
are used to drive the bus and the bus is inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to the CMOS Standby Supply Current, ICC3.
The Data Inputs/Outputs will still output data if a
Bus Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require VID to be applied to some pins.
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Table 4, Bus Operations.
Block Protection and Blocks Unprotection. Each
block can be separately protected against acci-
dental Program or Erase. Protected blocks can be
unprotected to allow data to be changed. Block
Protection and Blocks Unprotection operations
must only be performed on programming equip-
ment. For further information refer to Application
Note AN1122, Applying Protection and Unprotec-
tion to M29 Series Flash.
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| Information | Total 21 Pages | |
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