M29DW323DT90ZA6T Datasheet PDF - ST Microelectronics
| Part Number | M29DW323DT90ZA6T | |
| Description | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory | |
| Manufacturers | ST Microelectronics | |
| Logo |  |
|
|
There is a preview and M29DW323DT90ZA6T download ( pdf file ) link at the bottom of this page. Total 49 Pages | ||
Preview 1 page No Preview Available !
M29DW323DT
M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and
Read
– VPP =12V for Fast Program (optional)
s ACCESS TIME: 70, 90ns
s PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
s MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom Location)
s DUAL OPERATIONS
– Read in one bank while Program or Erase in
other
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s VPP/WP PIN for FAST PROGRAM and WRITE
PROTECT
s TEMPORARY BLOCK UNPROTECTION
MODE
s COMMON FLASH INTERFACE
– 64 bit Security Code
s EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB: 225Fh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
7 x 11mm
FBGA
TFBGA48 (ZE)
6 x 8mm
June 2003
1/49
|
| |
 
M29DW323DT, M29DW323DB
SUMMARY DESCRIPTION
The M29DW323D is a 32 Mbit (4Mb x8 or 2Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode where it can be read in the same way
as a ROM or EPROM.
The device features an asymmetrical block archi-
tecture. The M29DW323D has an array of 8 pa-
rameter and 63 main blocks and is divided into two
Banks, A and B, providing Dual Bank operations.
While programming or erasing in Bank A, read op-
erations are possible in Bank B and vice versa.
Only one bank at a time is allowed to be in pro-
gram or erase mode. The bank architecture is
summarized in Table 2. M29DW323DT locates the
Parameter Blocks at the top of the memory ad-
dress space while the M29DW323DB locates the
Parameter Blocks starting from the bottom.
M29DW323D has an extra 32 KWord (x16 mode)
or 64 KByte (x8 mode) block, the Extended Block,
that can be accessed using a dedicated com-
mand. The Extended Block can be protected and
so is useful for storing security information. How-
ever the protection is irreversible, once protected
the protection cannot be undone.
Each block can be erased independently so it is
possible to preserve valid data while old data is
erased. The blocks can be protected to prevent
accidental Program or Erase commands from
modifying the memory. Program and Erase com-
mands are written to the Command Interface of
the memory. An on-chip Program/Erase Controller
simplifies the process of programming or erasing
the memory by taking care of all of the special op-
erations that are required to update the memory
contents. The end of a program or erase operation
can be detected and any error conditions identi-
fied. The command set required to control the
memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP48 (12x20mm),
TFBGA63 (7x11mm, 0.8mm pitch) and TFBGA48
(6x8mm, 0.8mm pitch) packages. The memory is
supplied with all the bits erased (set to ’1’).
Figure 2. Logic Diagram
VCC VPP/WP
21
A0-A20
15
DQ0-DQ14
W DQ15A–1
M29DW323DT
E M29DW323DB BYTE
G RB
RP
VSS
AI05523
Table 1. Signal Names
A0-A20
Address Inputs
DQ0-DQ7 Data Inputs/Outputs
DQ8-DQ14 Data Inputs/Outputs
DQ15A–1 Data Input/Output or Address Input
E Chip Enable
G Output Enable
W Write Enable
RP Reset/Block Temporary Unprotect
RB Ready/Busy Output
BYTE
Byte/Word Organization Select
VCC Supply Voltage
VPP/WP
VPP/Write Protect
VSS Ground
NC Not Connected Internally
5/49
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for M29DW323DT90ZA6T electronic component. |
| Information | Total 49 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ M29DW323DT90ZA6T.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| M29DW323DT90ZA6 | The function is 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory. ST Microelectronics | |
| M29DW323DT90ZA6E | The function is 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory. ST Microelectronics | |
| M29DW323DT90ZA6F | The function is 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory. ST Microelectronics | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
M29D
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||