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M295V160BB70N6T fiches techniques PDF

ST Microelectronics - 16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory

Numéro de référence M295V160BB70N6T
Description 16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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M295V160BB70N6T fiche technique
M29F160BT
M29F160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 55ns
s PROGRAMMING TIME
– 8µs per Byte/Word typical
s 35 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 32 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29F160BT: 22CCh
– Bottom Device Code M29F160BB: 224Bh
TSOP48 (N)
12 x 20mm
Figure 1. Logic Diagram
VCC
20
A0-A19
15
DQ0-DQ14
W DQ15A–1
M29F160BT
E M29F160BB BYTE
G RB
RP
VSS
AI02920
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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