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PDF PEMD3 Data sheet ( Hoja de datos )
| Número de pieza | PEMD3 | |
| Descripción | NPN/PNP resistor-equipped transistors; R1 = 10 kohm/ R2 = 10 kohm | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PEMD3 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMD3
NPN/PNP resistor-equipped
transistors; R1 = 10 kΩ, R2 = 10 kΩ
Product specification
Supersedes data of 2001 Sep 13
2001 Nov 07
1 page  
Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Product specification
PEMD3
103
handbook, halfpage
hFE
102
10
MGW369
(1)
(2)
(3)
1
handbook, halfpage
VCEsat
(V)
10−1
MGW368
(1)
(2)
(3)
1
10−1
1
10 IC (mA) 102
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
10−2
1
10
IC (mA)
102
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
10
handbook, halfpage
Vi(off)
(V)
1
(1)
(2)
(3)
MGW371
102
handbook, halfpage
Vi(on)
(V)
10
1
MGW370
(1)
(2)
(3)
10−1
10−2
10−1
1 IC (mA) 10
TR1 (NPN); VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
10−1
10−1
1
10 IC (mA) 102
TR1 (NPN); VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
2001 Nov 07
5
5 Page 
Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
NOTES
Product specification
PEMD3
2001 Nov 07
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PEMD3.PDF ] | |
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