|
|
Numéro de référence | MBRB1660 | ||
Description | Schottky Rectifier ( Diode ) | ||
Fabricant | General Semiconductor | ||
Logo | |||
1 Page
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
MBRB1635 THRU MBRB1660
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 16.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal silicon junction,
majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability, low forward voltage drop
♦ High surge capability
♦ Guardring for overvoltage protection
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC=125°C
Peak repetitive forward current at TC=125°C
(rated VR, sq. wave,20 KHZ)
Peak forward surge current,
8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current (NOTE 1)
Maximum instantaneous forward voltage at: (NOTE 2)
IF=16A, TC=25°C
IF=16A, TC=125°C
Maximum instantaneous reverse current at
rated DC blocking voltage
TC= 25°C
(NOTE 2)
TC=125°C
Voltage rate of change (rated VR)
Maximum typical thermal resistance (NOTE 3)
Operating junction temperature range
Storage temperature range
SYMBOLS
VRRM
VRWM
VDC
I(AV)
IFRM
IFSM
IRRM
VF
IR
dv/dt
RΘJC
TJ
TSTG
MBRB1635
35
35
35
MBRB1645 MBRB1650
45 50
45 50
45 50
16.0
MBRB1660 UNITS
60 Volts
60 Volts
60 Volts
Amps
32.0 Amps
150.0
1.0
0.5
Amps
Amps
0.63 0.75 Volts
0.57 0.65
0.2 1.0
40.0 50.0
10,000
1.5
-65 to +150
-65 to +175
mA
V/µs
°C/W
°C
°C
NOTES: (1) 2.0µs pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case
4/98
|
|||
Pages | Pages 2 | ||
Télécharger | [ MBRB1660 ] |
No | Description détaillée | Fabricant |
MBRB1660 | Schottky Rectifier ( Diode ) | General Semiconductor |
MBRB1660 | Schottky Barrier Rectifier ( Diode ) | Vishay |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |