DataSheetWiki


MBRB1060 fiches techniques PDF

General Semiconductor - Schottky Rectifier ( Diode )

Numéro de référence MBRB1060
Description Schottky Rectifier ( Diode )
Fabricant General Semiconductor 
Logo General Semiconductor 





1 Page

No Preview Available !





MBRB1060 fiche technique
MBRB1035 THRU MBRB1060
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 10.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability,
low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(SEE FIG. 1)
Peak repetitive forward current at TC=135°C
(square wave 20 KHZ)
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Peak repetitive reverse surge current (NOTE 1)
Voltage rate of change (rated VR)
Maximum instantaneous
forward voltage at (NOTE 2)
IF=10A, TC=25°C
IF=10A, TC=125°C
IF=20A, TC=25°C
IF=20A, TC=125°C
Maximum instantaneous reverse current at rated
DC blocking voltage
TC= 25°C
(NOTE 2) TC=125°C
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature range
NOTES:
(1) 2.0µs pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
SYMBOLS
VRRM
VRWM
VDC
I(AV)
IFRM
MBRB1035
35
35
35
MBRB1045
45
45
45
MBRB1050
50
50
50
10.0
MBRB1060
60
60
60
20.0
IFSM
IRRM
dv/dt
VF
IR
RΘJC
TJ
TSTG
150.0
1.0
10,000
-
0.57
0.84
0.72
0.10
15.0
2.0
-65 to +150
-65 to +175
0.5
0.80
0.70
0.95
0.85
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
Amps
V/µs
Volts
mA
°C/W
°C
°C
4/98

PagesPages 2
Télécharger [ MBRB1060 ]


Fiche technique recommandé

No Description détaillée Fabricant
MBRB1060 Schottky Rectifier ( Diode ) General Semiconductor
General Semiconductor
MBRB1060 Schottky Barrier Rectifier ( Diode ) Vishay
Vishay
MBRB1060 Schottky Barrier Rectifiers GOOD-ARK
GOOD-ARK
MBRB1060CT High Power Schottky Diode VIKING TECH
VIKING TECH

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche