|
|
Número de pieza | MBRA130LT3 | |
Descripción | Surface Mount Schottky Power Rectifier | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBRA130LT3 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBRA130LT3/D
Advance Information
Surface Mount
Schottky Power Rectifier
MBRA130LT3
SMA Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal–to–silicon power
rectifier. Features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency switching power
supplies; free wheeling diodes and polarity protection diodes.
• Compact Package with J–Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over–Voltage Protection
• Low Forward Voltage Drop
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8″
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add “T3” Suffix to Part Number
• Marking: B3
SCHOTTKY BARRIER
RECTIFIER
1 AMPERES
30 VOLTS
CASE 403B-01
SMA
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 105°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 105°C)
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Storage/Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Lead (2)
Thermal Resistance — Junction–to–Ambient (2)
Symbol
VRRM
VRWM
VR
IO
IFRM
IFSM
Tstg, TC
TJ
dv/dt
Rtjl
Rtja
Value
30
1.0
2.0
25
– 55 to +150
– 55 to +125
10,000
35
86
Unit
V
A
A
A
°C
°C
V/µs
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), see Figure 2
(IF = 1.0 A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current, see Figure 4
(VR = 30 V)
(VR = 15 V)
VF
TJ = 25°C TJ = 100°C
V
0.41 0.35
0.47 0.43
IR
TJ = 25°C TJ = 100°C
mA
1.0 25
0.4 12
This document contains advance information on a new product. Specifications and information herein are subject to change without notice.
(1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
(2) Mounted with minimum recommended pad size (2 mm * 2 mm), PC Board FR4, see Figure 8.
REV 2
©MMoottoororloal,aInSc.c1h99o6ttky Power Rectifier Data
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MBRA130LT3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBRA130LT3 | Surface Mount Schottky Power Rectifier | Motorola Semiconductors |
MBRA130LT3 | Surface Mount Schottky Power Rectifier | ON Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |