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PDF MBR835 Data sheet ( Hoja de datos )
| Número de pieza | MBR835 | |
| Descripción | 8.0A SCHOTTKY BARRIER RECTIFIER | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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MBR830 - MBR860
8.0A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: See Diagram
· Weight: 2.24 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
C
K
B
D
L
M
A
12
E
JN
G
R
Pin 1
Pin 2
P
Case
TO-220AC
Dim Min Max
A 14.22 15.88
B 9.65 10.67
C 2.54 3.43
D 5.84 6.86
E ¾ 6.35
G 12.70 14.73
J 0.51 1.14
K 3.53Æ 4.09Æ
L 3.56 4.83
M 1.14 1.40
N 0.30 0.64
P 2.03 2.92
R 4.83 5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC = 125°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
@ t £ 2.0ms
Forward Voltage Drop
@ IF = 8.0A, TC = 125°C
@ IF = 8.0A, TC = 25°C
@ IF = 16A, TC = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IRRM
VFM
IRM
Cj
RqJC
dV/dt
Tj, TSTG
MBR
830
30
21
MBR
835
35
24.5
MBR
840
MBR
845
40 45
28 31.5
8.0
150
1.0
0.57
0.70
0.84
0.1
15
250
3.0
1000
-65 to +150
MBR
850
50
35
MBR
860
Unit
60 V
42 V
A
A
A
0.70
0.80 V
0.95
mA
pF
K/W
V/ms
°C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30030 Rev. B-4
1 of 2
MBR830-MBR860
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR835.PDF ] | |
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