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MBR760 fiches techniques PDF

Fairchild Semiconductor - Schottky Rectifiers

Numéro de référence MBR760
Description Schottky Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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MBR760 fiche technique
MBR735 - MBR760
Schottky Rectifiers
Features
• Low Power Loss, High Efficiency
• High Surge Capacity
• Metal Silicon Junction, Majority Carrier Conduction
• High Current Capacity, Low Forward-Voltage Drop
• Guard Ring for Over-Voltage Protection (OVP)
Applications
• Low-Voltage, High-Frequency Inverters
Free Wheeling and Polarity Protection
12
TO-220AC
PIIN1
PIIN2
June 2013
Case
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
735 745 750 760
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
35 45 50 60 V
7.5 A
150 A
Tstg Storage Temperature Range
TJ Operating Junction Temperature
-65 to +175
-65 to +150
°C
°C
Thermal Characteristics
Symbol
Parameter
PD
RθJA
RθJL
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Value
2.0
60
3.0
Units
W
°C/W
°C/W
© 2001 Fairchild Semiconductor Corporation
MBR735 - MBR760 Rev. 1.1.0
1
www.fairchildsemi.com

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