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Fairchild Semiconductor - 30 Ampere Schottky Barrier Rectifiers

Numéro de référence MBR2560CT
Description 30 Ampere Schottky Barrier Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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MBR2560CT fiche technique
Discrete POWER & Signal
Technologies
MBR2535CT - MBR2560CT
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
TO-220AB
PIN 1
PIN 3
+
CASE
PIN 2
30 Ampere Schottky Barrier Rectifiers
0 .1 13 ( 2. 87 )
0 .1 03 ( 2. 62 )
0 .1 6( 4 .0 6)
0 .1 4( 3 .5 6)
0 .0 37 ( 0. 94 )
0 .0 27 ( 0. 68 )
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
0 .4 12 ( 10 .5 )
MAX
0 .1 54 ( 3. 91 )
0 .1 48 ( 3. 74 )
0.27(6.86)
0.23(5.84)
0 .5 94 ( 15 .1 )
0 .5 87 ( 14 .9 )
0.185(4.70)
0.175(4.44)
0.055(1.40)
0.045(1.14)
12 3
0.56(14.22)
0.53(13.46)
0.11(2.79)
0.10(2.54)
0 .1 05 ( 2. 67 )
0 .0 95 ( 2. 41 )
0.025(0.64)
0.014(0.35)
Dimensions are in: inches (mm)
Symbol
Parameter
Value
Units
IO
if(repetitive)
if(surge)
PD
RθJA
RθJL
Tstg
TJ
Average Rectified Current
.375 " lead length @ TA = 130°C
Peak Repetitive Forward Current
(Rated VR , Square Wave, 20 KHz) @ TA = 130°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
30
30
150
2.0
16.6
60
1.5
-65 to +175
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
A
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage
IF = 15 A, TC = 25°C
IF = 15 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
Peak Repetitive Reverse Surge
Current
2.0 us Pulse Width, f = 1.0 KHz
2535CT
35
24
35
Device
2545CT
2550CT
45 50
31 35
45 50
10,000
2560CT
60
42
60
0.2 1.0
40 50
- 0.75
- 0.65
0.82 -
0.73 -
1.0 0.5
Units
V
V
V
V/uS
mA
mA
V
V
V
V
A
©1999 Fairchild Semiconductor Corporation
MBR2535CT - MBR2560CT, Rev. A

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