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Número de pieza | LCE2009S | |
Descripción | NPN microwave power transistors | |
Fabricantes | Philipss | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LCE2009S (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Mar 03
1 page Philips Semiconductors
NPN microwave power transistors
Product specification
LBE2003S; LBE2009S;
LCE2009S
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
ICBO
ICER
IEBO
hFE
Ccb
Cce
Ceb
collector cut-off current
collector cut-off current
LBE2003S
LBE2009S; LCE2009S
collector cut-off current
LBE2003S
LBE2009S; LCE2009S
emitter cut-off current
LBE2003S
LBE2009S; LCE2009S
DC current gain
collector-base capacitance
LBE2003S
LBE2009S; LCE2009S
collector-emitter capacitance
LBE2003S
LBE2009S; LCE2009S
emitter-base capacitance
LBE2003S
LBE2009S; LCE2009S
VCB = 20 V; IE = 0
VCB = 40 V; IE = 0
VCB = 35 V; RBE = 220 Ω
VCB = 35 V; RBE = 100 Ω
VEB = 1.5 V; IC = 0
VCE = 5 V; IC = 30 mA
VCE = 5 V; IC = 110 mA
VCB = 18 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
VCE = 18 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
VCB = 10 V; VEB = 1 V;
IE = IC = 0; f = 1 MHz
−
−
−
−
−
−
−
15
15
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
0.3
0.6
0.45
0.6
1.7
3.3
MAX.
0.1
150
250
500
1000
0.05
0.2
150
150
−
−
−
−
−
−
UNIT
µA
µA
µA
µA
µA
µA
µA
pF
pF
pF
pF
pF
pF
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
5
5 Page Philips Semiconductors
NPN microwave power transistors
Product specification
LBE2003S; LBE2009S;
LCE2009S
1
handbook, halfpage
PL
(W)
0.5
MGD994
(1) PL1
8
handbook, halfpage
S12
(dB)
4
MGD995
typ
0
0 50 100 150
Pi (mW)
f = 2 GHz; Tmb = 25 °C.
VCE = 18 V; IC = 110 mA.
(1) Gpo = 9.8 dB.
Fig.11 Load power as a function of input power.
0
0 50 100 IC (mA) 150
Class-A operation.
f = 2 GHz; Tmb = 25 °C; VCE = 18 V.
Fig.12 s12 as a function of collector current.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet LCE2009S.PDF ] |
Número de pieza | Descripción | Fabricantes |
LCE2009S | NPN microwave power transistors | Philipss |
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