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PDF LC35256DT-10 Data sheet ( Hoja de datos )
| Número de pieza | LC35256DT-10 | |
| Descripción | Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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Ordering number : EN5823
CMOS IC
LC35256D-10, LC35256DM, DT-70/10
Dual Control Pins: OE and CE
256K (32768-word × 8-bit) SRAM
Overview
The LC35256D, LC35256DM, and LC35256DT are
32768-word × 8-bit asynchronous silicon gate CMOS
static RAMs. These devices use a 6-transistor full CMOS
memory cell, and feature low-voltage operation, low
current drain, and an ultralow standby current. They
provide two control signal inputs: an OE input for high-
speed access and a chip select (CE) input for device
selection and low power operating mode. This makes
these devices optimal for systems that require low power
or battery backup, and they allow memory to be expanded
easily. Their ultralow standby current allows capacitor-
based backup to be used as well. Since they support 3-V
operation, they are appropriate for use in portable systems
that operate from batteries.
Features
• Supply voltage range: 2.7 to 5.5 V
— 5-V operation: 5.0 V±10%
— 3-V operation: 2.7 to 3.6 V
• Access times
— 5-V operation
LC35256DM, DT-70: 70 ns (max)
LC35256D, DM, DT-10: 100 ns (max)
— 3-V operation
LC35256DM, DT-70: 200 ns (max)
LC35256D, DM, DT-10: 500 ns (max)
• Standby current
— 5-V operation: 1.0 µA (Ta ≤ 60°C),
5.0 µA (Ta ≤ 85°C)
— 3-V operation: 0.8 µA (Ta ≤ 60°C),
4.0 µA (Ta ≤ 85°C)
• Operating temperature range: –40 to +85°C
• Data retention supply voltage: 2.0 to 5.5 V
• All I/O levels
— 5-V operation: TTL compatible
— 3-V operation: VCC – 0.2 V/0.2 V
• Shared I/O pins and 3-state outputs
• No clock signal required.
• Packages
— 28-pin DIP (600 mil) plastic package: LC35256D
— 28-pin SOP (450 mil) plastic package: LC35256DM
— 28-pin TSOP (8 × 13.4 mm) plastic package:
LC35256DT
Package Dimensions
unit: mm
3012A-DIP28
[LC35256D]
unit: mm
3187-SOP28D
[LC35256DM]
SANYO: DIP28
SANYO: SOP28D
unit: mm
3221-TSOP28(type-I)
[LC35256DT]
SANYO: TSOP28(type-I)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51398RM (OT) No. 5823-1/8
1 page  
LC35256D-10, LC35256DM, DT-70/10
DC Electrical Characteristics at Ta = –40 to +85°C, VCC = 2.7 to 3.6 V
Parameter
Symbol
Conditions
min
Input leakage current
Output leakage current
High-level output voltage
Low-level output voltage
Operating
current drain
VCC – 0.2 V/
0.2 V inputs
ILI
ILO
VOH
VOL
ICCA4
VIN = 0 to VCC
–1.0
VCE = VIH or VOE = VIH or VWE = VIL, VI/O = 0 to VCC
–1.0
IOH = –0.5 mA
VCC – 0.2
IOL = 1.0 mA
VCE = VIL, VIN = VIH or VIL,
II/O = 0 mA, Duty 100%
min LC35256DM, DT-70
cycle LC35256D, DM, DT-10
1 µs cycle
Standby mode
current drain
VCC – 0.2 V/
0.2 V inputs
ICCS1
VCE ≥ VCC – 0.2 V,
VIN = 0 to VCC
Ta ≤ 25°C
Ta ≤ 60°C
Ta ≤ 85°C
Note *: Reference value at Ta = 25°C, VCC = 3 V.
Ratings
typ*
7
3
1.5
0.01
AC Electrical Characteristics at Ta = –40 to +85°C, VCC = 2.7 to 3.6 V
Input pulse voltage level
Input rise and fall times
Input and output timing level
Output load
LC35256DM, DT-70
LC35256D, DM, DT-10
AC test conditions
VIH = VCC – 0.2 V, VIL = 0.2 V
10 ns
1.5 V
30 pF (Including jig capacitances.)
100 pF (Including jig capacitances.)
max
+1.0
+1.0
0.2
10
5
2.5
0.8
4.0
Unit
µA
µA
V
V
mA
mA
mA
µA
µA
µA
Read Cycle
Parameter
Symbol
Read cycle time
tRC
Address access time
tAA
CE access time
tCA
OE access time
tOA
Output hold time
tOH
CE output enable time
tCOE
OE output enable time
tOOE
CE output disable time
tCOD
OE output disable time
tOOD
Note *: Specification values for the LC35256DM and LC35256DT.
-70*
min
200
20
20
10
LC35256D, DM, DT
max min
500
200
200
100
20
20
10
60
50
-10
max
500
500
250
120
100
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
No. 5823-5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet LC35256DT-10.PDF ] | |
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