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LC33832PL fiches techniques PDF

Sanyo - 256 K (32768 words X 8 bits) Pseudo-SRAM

Numéro de référence LC33832PL
Description 256 K (32768 words X 8 bits) Pseudo-SRAM
Fabricant Sanyo 
Logo Sanyo 





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LC33832PL fiche technique
Ordering number : EN4430C
CMOS LSI
LC33832P, S, M, PL, SL, ML-70/80/10
256 K (32768 words × 8 bits) Pseudo-SRAM
Overview
The LC33832 series is composed of pseudo static RAM
that operates on a single 5 V power supply and is
organized as 32768 words × 8 bits. By using memory
cells each composed of a single transistor and capacitor,
together with peripheral CMOS circuitry, this series
achieves ease of use with high density, high speed, and
low power dissipation. The LC33832 series can easily
accomplish auto-refresh and self-refresh by means of
OE/RFSH input. As with asynchronous static RAM, WE
input uses a system for incorporating input data at the WE
rise, thereby facilitating interfacing with a microcomputer.
The LC33832 series features pin compatibility with 256 K
static RAM (the LC36256A series), and available
packages are the standard 28-pin DIP with widths of 600
mil or 300 mil, and the SOP with a width of 450 mil.
CE-only refresh can be accomplished by selecting address
256 (A0 to A7) within 4 ms.
Features
• 32768 words × 8 bits configuration
• Single 5 V ±10% power supply
• All input and output (I/O) TTL compatible
• Fast access times and low power dissipation
• 4 ms refresh using 256 refresh cycle
• CE-only refresh, auto-refresh, and self-refresh
• Low-power version: 100 µA self-refresh current
• Package
DIP28-pin (600 mil) plastic package: LC33832P, PL
DIP28-pin (300 mil) plastic package: LC33832S, SL
SOP28-pin (450 mil) plastic package: LC33832M, ML
Package Dimensions
unit: mm
3012A-DIP28
[LC33832P, PL]
unit: mm
3133-DIP28
[LC33832S, SL]
SANYO: DIP28
SANYO: DIP28
• CE access time/OE access time/Cycle time/Current drain
Parameter
CE access time
OE access time
Cycle time
Current drain
Operating
Standby
-70
70 ns
30 ns
115 ns
65 mA
LC33832P, S, M, PL, SL, ML
-80
80 ns
35 ns
130 ns
60 mA
1 mA/100 µA (L version)
-10
100 ns
40 ns
160 ns
50 mA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22897HA (OT)/52595TH (OT)/N1993JN/40893JN A8-9957, 58, 59, No. 4430-1/9

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