DataSheetWiki


KBP2005G fiches techniques PDF

Diodes Incorporated - 2.0A GLASS PASSIVATED BRIDGE RECTIFIER

Numéro de référence KBP2005G
Description 2.0A GLASS PASSIVATED BRIDGE RECTIFIER
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





1 Page

No Preview Available !





KBP2005G fiche technique
KBP2005G - KBP210G
2.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
Dim
KBP
Min
Max
· Surge Overload Rating to 65A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability
J
A
Classification 94V-0
L
K
M
A 14.25 14.75
B 10.20 10.60
C 2.29 Typical
D 14.25 14.73
· UL Listed Under Recognized Component Index,
File Number E94661
+
_B
E 3.56 4.06
N G 0.76 0.86
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity: Marked on Body
· Approx. Weight: 1.52 grams
H 1.17 1.42
HC
D
J
2.8 X 45°
Chamfer
G P K 0.80 1.10
L 3.35 3.65
M 3° Nominal
E N 2° Nominal
· Mounting Position: Any
P 0.30 0.64
· Marking: Type Number
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
KBP
2005G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
RMS Reverse Voltage
VR(RMS) 35
Average Rectified Output Current
@ TC = 105°C IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
(JEDEC method)
Forward Voltage per element
@ IF = 2.0A VFM
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
IRM
Typical Junction Capacitance per Element (Note 2)
Cj
Typical Thermal Resistance (Note 1)
RqJC
Operating and Storage Temperature Range
Tj, TSTG
KBP
201G
100
70
KBP KBP KBP
202G 204G 206G
200 400 600
140 280 420
2.0
65
1.1
5.0
500
25
14
-65 to +150
KBP
208G
800
560
KBP
210G
Unit
1000 V
700 V
A
A
V
µA
pF
°C/W
°C
Notes: 1. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS21205 Rev. F-2
1 of 2
KBP2005G-KBP210G

PagesPages 2
Télécharger [ KBP2005G ]


Fiche technique recommandé

No Description détaillée Fabricant
KBP2005 2A SINGLE - PHASE SILICON BRIDGE Semtech
Semtech
KBP2005 SINGLE PHASE SILICON BRIDGE RECTIFIER CDIL
CDIL
KBP2005 SILICON BRIDGE RECTIFIERS MDD
MDD
KBP2005 (KBP2005 - KBP210) 2 Amp Bridge Rectifier TGS
TGS

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche