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K4N32 fiches techniques PDF

KODENSHI KOREA CORP - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

Numéro de référence K4N32
Description Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
Fabricant KODENSHI KOREA CORP 
Logo KODENSHI KOREA CORP 





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K4N32 fiche technique
Photocoupler
K4N32 • K4N32A
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Photo Darlington transistor in a 6-pin
package.
FEATURES
• Small Package Size
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Type 1000% (at IF=10mA, VCE=10V)
• Electrical Isolation Voltage : AC2500Vrms
• UL Recognized File No. E107486
APPLICATIONS
• Interface between two circuits of different potential
• Telephone Line Receiver, CMOS Logic Interface
• Power Supply Regulators
DIMENSION
654
(Unit : mm)
7.62 0.25
6.4
13
8.9 0.25
Orientation Mark
0 -15
0.25
2.54 0.25
0.5
1.2
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
65 4
12
3
MAXIMUM RATINGS
Parameter
Forward Current
Input
Reverse Voltage
Peak Forward Current *1
Power Dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Output Collector-Base Breakdown Voltage
Collector Current
Collector Power Dissipation
Input to Output Isolation Voltage*2
Storage Temperature
Operating Temperature
Lead Soldering Temperature*3
Total Power Dissipation
*1. Input current with 300 pulse width, 2% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
Symbol
IF
VR
IFP
PD
BVCEO
BVECO
BVECO
IC
PC
Viso
Tstg
Topr
Tsol
Ptot
Rating
150
30
5
30
100
150
AC2500
-55~+125
-30~+100
260
250
(Ta=25
Unit
mA
V
A
mW
V
V
V
mA
mW
Vrms
mW
)
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