Datasheet K4N28-PDF.HTML Equivalent ( PDF )

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K4N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K4N25	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler K4N25 • K4N25A These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 0.25 (Unit : mm) FEATURES • Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio	KODENSHI KOREA CORP	data
2	K4N25A	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler K4N25 • K4N25A These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 0.25 (Unit : mm) FEATURES • Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio	KODENSHI KOREA CORP	data
3	K4N25G	Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler K4N25G • K4N25H These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 6 5 4 0.25 6.4 DIMENSION (Unit : mm) 0.51Min. 3.8 • TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Tra	KODENSHI KOREA CORP	data
4	K4N25H	Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler K4N25G • K4N25H These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 6 5 4 0.25 6.4 DIMENSION (Unit : mm) 0.51Min. 3.8 • TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Tra	KODENSHI KOREA CORP	data
5	K4N26	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler K4N26 These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 (Unit : mm) 0.25 FEATURES • Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100%	KODENSHI KOREA CORP	data
6	K4N26323AE-GC	128Mbit GDDR2 SDRAM K4N26323AE-GC 128M GDDR2 SDRAM 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.7 (Jan. 2003) K4N26323AE-GC 128M GDDR2 SDR	Samsung	data
7	K4N27	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler K4N27 These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 0.25 (Unit : mm) FEATURES • Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100%	KODENSHI KOREA CORP	data

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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