DataSheetWiki


K4F151611 fiches techniques PDF

Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Numéro de référence K4F151611
Description 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
Fabricant Samsung 
Logo Samsung 





1 Page

No Preview Available !





K4F151611 fiche technique
K4F171611D, K4F151611D
K4F171612D, K4F151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power
consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
• Part Identification
- K4F171611D-J(T) (5V, 4K Ref.)
- K4F151611D-J(T) (5V, 1K Ref.)
- K4F171612D-J(T) (3.3V, 4K Ref.)
- K4F151612D-J(T) (3.3V, 1K Ref.)
Active Power Dissipation
Speed
-50
-60
3.3V
4K 1K
324 504
288 468
Unit : mW
5V
4K 1K
495 770
440 715
Refresh Cycles
Part VCC Refresh Refresh period
NO. cycle Normal L-ver
K4F171611D
K4F171612D
K4F151611D
K4F151612D
5V
3.3V
5V
3.3V
4K
1K
64ms
16ms
128ms
Perfomance Range
Speed tRAC
-50 50ns
tCAC
15ns
-60 60ns 15ns
tRC
90ns
110ns
tPC
35ns
40ns
Remark
5V/3.3V
5V/3.3V
• Fast Page Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
400mil packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
A0-A11
(A0 - A9)*1
A0 - A7
(A0 - A9)*1
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Memory Array
1,048,576 x16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
Note) *1 : 1K Refresh
DQ0
to
DQ7
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.

PagesPages 30
Télécharger [ K4F151611 ]


Fiche technique recommandé

No Description détaillée Fabricant
K4F151611 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung
Samsung
K4F151611D 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung
Samsung
K4F151612D 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung
Samsung

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche