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Mitsubishi - 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Numéro de référence M54585FP
Description 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Fabricant Mitsubishi 
Logo Mitsubishi 





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M54585FP fiche technique
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585P and M54585FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with TTL output or with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
IN1
1
IN2
2
IN3
3
IN44
INPUT
IN5
5
IN6
6
IN77
IN88
GND 9
18
O1
17
O2
16
O3
15 O4
OUTPUT
14
O5
13
O6
12 O7
11 O8
10 COM COMMON
Package type 18P4G(P)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
FUNCTION
The M54585P and M54585FP each have eight circuits,
which are NPN Darlington transistors. Input transistors have
resistance of 2.7kbetween the base and input pin. A spike-
killer clamping diode is provided between each output pin
and GND. Output transistor emitters are all connected to the
GND pin.
Collector current is 500mA maximum. The maximum collec-
tor-emitter voltage is 50V.
The M54585FP is enclosed in a molded small flat package,
enabling space-saving design.
NC 1
IN1
2
IN2
3
IN34
INPUT
IN4
5
IN5
6
IN6
7
IN78
IN89
20 NC
19
O1
18
O2
17
O3
16 O4
OUTPUT
15
O5
14
O6
13 O7
12 O8
GND 10
11 COM COMMON
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
INPUT
2.7K
COM
OUTPUT
7.2K
3K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Aug. 1999

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