DataSheetWiki


M54567P fiches techniques PDF

Mitsubishi - 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Numéro de référence M54567P
Description 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Fabricant Mitsubishi 
Logo Mitsubishi 





1 Page

No Preview Available !





M54567P fiche technique
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54567P and M54567FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
PNP and NPN transistors. Both the semiconductor inte-
grated circuits perform high-current driving with extremely
low input-current supply.
FEATURES
High breakdown voltage (BVCEO 50V)
High-current driving (Ic(max) = 1.5A)
With clamping diodes
Driving available with NMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
VCC 1
OUTPUT1 O12
INPUT1 IN13
4
GND
5
INPUT2 IN26
OUTPUT2 O27
VCC 8
16 COM COMMON
15 O4 OUTPUT4
14 IN4 INPUT4
13
GND
12
11 IN3 INPUT3
10 O3 OUTPUT3
9 COM COMMON
16P4(P)
Package type 16P2N-A(FP)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
FUNCTION
The M54567P and M54567FP each have four circuits, which
are made of PNP transistors and NPN Darlington transistors.
The input has 8k, and a spike-killer clamping diode is pro-
vided between the output pin (collector) and COM pin. All
output transistor emitters are connected to the GND pin.
Collector current is 1.5A maximum. The maximum collector-
emitter voltage is 50V.
The M54567FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
INPUT
22K
8K
2K
5.5K 3K
VCC
COM
OUTPUT
GND
The four circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
VCEO
IC
VI
VR
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
IF Clamping diode forward current
Pd Power dissipation
Topr Operating temperature
Tstg Storage temperature
Conditions
Output, H
Current per circuit output, L
Pulse Width 10ms, Duty Cycle 5%
Pulse Width 100ms, Duty Cycle 5%
Ta = 25°C, when mounted on board
Ratings
10
–0.5 ~ +50
1.5
–0.5 ~ +30
50
1.5
1.0
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
V
A
V
V
A
W
°C
°C
Aug. 1999

PagesPages 4
Télécharger [ M54567P ]


Fiche technique recommandé

No Description détaillée Fabricant
M54567FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Mitsubishi
Mitsubishi
M54567FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Mitsubishi
Mitsubishi
M54567P 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Mitsubishi
Mitsubishi
M54567P 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Mitsubishi
Mitsubishi

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche