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Mitsubishi - 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Numéro de référence M54563P
Description 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Fabricant Mitsubishi 
Logo Mitsubishi 





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M54563P fiche technique
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54563FP is an eight-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
FEATURES
High breakdown voltage (BVCEO 50V)
High-current driving (Io(max) = –500mA)
With clamping diodes
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Wide operating temperature range (Ta = –20 to +75°C)
Output current-sourcing type
PIN CONFIGURATION
IN1
1
IN2
2
IN3
3
INPUT
IN4
4
IN5
5
IN6
6
IN77
IN88
18
O1
17
O2
16
O3
15
O4
OUTPUT
14
O5
13
O6
12 O7
11 O8
VS 9
10 GND
Package type 18P4G(P)
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M54563P and M54563FP each have eight circuits,
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A clamping diode is provided between each output
and GND. VS and GND are used commonly among the eight
circuits.
The inputs have resistance of 3k, and voltage of up to 10V
is applicable. Output current is 500 mA maximum. Supply
voltage VS is 50V maximum.
The M54563FP is enclosed in a molded small flat package,
enabling space-saving design.
NC 1
IN1
2
IN2
3
IN3
4
INPUT
IN4
5
IN5
6
IN6
7
IN78
IN89
20 NC
19
O1
18
O2
17
O3
16
O4
OUTPUT
15
O5
14
O6
13 O7
12 O8
VS 10
11 GND
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
20K
VS
INPUT
3K
7.2K
1.5K
3K
OUTPUT
GND
The eight circuits share the VS and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Aug. 1999

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