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Número de pieza | PD8042 | |
Descripción | InGaAs AVALANCHE PHOTO DIODES | |
Fabricantes | Mitsubishi Electric Semiconductor | |
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NAME
MITSUBISHI LASER DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
PD8042,PD8932
DISCRIPTION
PD8XX2 is an InGaAs avalanche photodiode suitable for
receiving the light having low noise, a wavelength band of
1000 to 1600nm. This photodiode features low noise, a high
quantum efficiency and a very small dark current and is
suitable for the light receiving elements for long-distance
optical communications.
FEATURES
• Active diameter 50µm
• Low noise
• High speed response
• Very small dark current
• High quantum efficiency
APPLICATION
Receiver for long-distance fiber - optic communication systems
ABSOLUTE MAXIMUM RATINGS
Symbol
IR
IF
TC
Tstg
Parameter
Reverse current
Forward current
Case temperature
Storage temperature
Conditions
-
-
-
-
Ratings
500
2
-40~+85
-40~+100
Unit
µA
mA
˚C
˚C
ELECTRICAL /OPTICAL CHARACTERISTICS (TC = 25˚C)
Symbol
Parameter
V(BR)R
Ct
ID
η
fc
Breakdown voltage
Capacitance
Dark current
Quantum efficiency
Cutoff frequency (-3dB)
∗: Ct=0.6F (typ.) for PD8932
Test conditions
IR = 100 µ A
VR = 0.9V (BR) R,f = 1MHz
VR = 0.9V (BR) R
M = 1, λ = 1300nm
M = 10,RL = 50 Ω ,-3dB
Limits
Unit
Min. Typ. Max.
40 60 90 V
- 0.7∗ 0.9 pF
- 60 100 nA
- 80 - %
1 2.5 - GHz
SEP.2000
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet PD8042.PDF ] |
Número de pieza | Descripción | Fabricantes |
PD8042 | InGaAs AVALANCHE PHOTO DIODES | Mitsubishi Electric Semiconductor |
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