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STMicroelectronics - RF POWER TRANSISTORS The LdmoST Plastic FAMILY

Numéro de référence PD57070S
Description RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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PD57070S fiche technique
PD57070
PD57070S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57070 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57070 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57070’s
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD57070
BRANDING
PD57070
PowerSO-10RF
(straight lead)
ORDER CODE
PD57070S
BRANDING
PD57070S
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA (TCASE =70 °C)
Rth(j-c) Junction -Case Thermal Resistance
March, 21 2003
Value
65
± 20
7
95
165
-65 to +150
1.0
Unit
V
V
A
W
°C
°C
°C/W
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