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Mitsubishi - 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Numéro de référence M54532P
Description 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Fabricant Mitsubishi 
Logo Mitsubishi 





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M54532P fiche technique
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54532P and M54532FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO 50V)
High-current driving (Ic(max) = 1.5A)
With clamping diodes
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
COMMON COM 1
OUTPUT1 O12
INPUT1 IN13
4
GND
5
INPUT2 IN26
OUTPUT2 O27
COMMON COM 8
16 NC
15 O4 OUTPUT4
14 IN4 INPUT4
13
GND
12
11 IN3 INPUT3
10 O3 OUTPUT3
9 NC
16P4(P)
Package type 16P2N-A(FP) NC : No connection
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
CIRCUIT DIAGRAM
INPUT
340
COM
OUTPUT
FUNCTION
The M54532P and M54532FP each have four circuits con-
sisting of NPN Darlington transistors. They have resistance
of 340between input transistor bases and input pins. A
clamping diode is provided between each output pin (collec-
tor) and COM pin. The output transistor emitters are all con-
nected to the GND pin.
The collector current is 1.5A maximum. Collector-emitter
supply voltage is 50V maximum.
The M54532FP is enclosed in a molded small flat package,
enabling space-saving design.
5.5K
3K
GND
The four circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
IC
VI
VR
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
IF Clamping diode forward current
Pd Power dissipation
Topr Operating temperature
Tstg Storage temperature
Conditions
Output, H
Current per circuit output, L
Pulse Width 10ms, Duty Cycle 5%
Pulse Width 100ms, Duty Cycle 5%
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
1.5
–0.5 ~ +10
50
1.5
1.25
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
A
V
V
A
W
°C
°C
Aug. 1999

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