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Mitsubishi - 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Numéro de référence M54526P
Description 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Fabricant Mitsubishi 
Logo Mitsubishi 





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M54526P fiche technique
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54526P and M54526FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with PMOS IC output of 8-18V
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
IN1
1
IN2
2
IN3
3
INPUT IN44
IN5
5
IN6
6
IN77
GND 8
16
O1
15
O2
14
O3
13 O4 OUTPUT
12
O5
11
O6
10 O7
9 COM COMMON
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
INPUT
10.5K
5K
COM
OUTPUT
FUNCTION
The M54526P and M54526FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 10.5kbetween input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin (pin 9). The output tran-
sistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.
The M54526FP is enclosed in a molded small flat package,
enabling space-saving design.
3K
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Aug. 1999

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