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STMicroelectronics - RF POWER TRANSISTORS The LdmoST Plastic FAMILY

Numéro de référence PD55003S
Description RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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PD55003S fiche technique
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
PD55003
PD55003S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55003 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55003’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
PowerSO-10RF
(formed lead)
ORDER CODE
PD55003
BRANDING
PD55003
PowerSO-10RF
(Straight lead)
ORDER CODE
PD55003S
BRANDING
PD55003S
Value
40
± 20
2.5
31.7
165
-65 to +150
3.0
Unit
V
V
A
W
°C
°C
°C/W
March, 21 2003
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