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PD45128441-T fiches techniques PDF

Elpida Memory - 128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)

Numéro de référence PD45128441-T
Description 128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
Fabricant Elpida Memory 
Logo Elpida Memory 





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PD45128441-T fiche technique
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441-T, 45128841-T, 45128163-T
128M-bit Synchronous DRAM
4-bank, LVTTL
WTR (Wide Temperature Range)
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access
memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 54-pin TSOP (II).
Features
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0(A13) and BA1(A12)
Byte control (×16) by LDQM and UDQM
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Ambient temperature (TA): 20 to + 85°C
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
• ×4, ×8, ×16 organization
Single 3.3 V ± 0.3 V power supply
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64 ms
Burst termination by Burst stop command and Precharge command
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0218N20 (Ver. 2.0)
Date Published November 2001 (K) Japan
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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