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PDF EL2006 Data sheet ( Hoja de datos )
| Número de pieza | EL2006 | |
| Descripción | High Gain Fast FET Input Op Amp | |
| Fabricantes | Elantec | |
| Logotipo |  |
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EL2006 EL2006A
High Gain Fast FET Input Op Amp
Features
90 dB open loop gain
450 V ms slew rate
40 MHz bandwidth
No thermal tail
3 mV max input offset voltage
Offset nulls with single pot
No compensation required for
gains above 50
Peak output current to 200 mA
Pin compatible with LH0032
80 dB common mode rejection
Ordering Information
Part No
Temp Range Pkg Outline
EL2006CG
b25 C to a85 C TO-8 MDP0002
EL2006G
b55 C to a125 C TO-8 MDP0002
EL2006G 883B b55 C to a125 C TO-8 MDP0002
EL2006ACG
b25 C to a85 C TO-8 MDP0002
EL2006AG
b55 C to a125 C TO-8 MDP0002
EL2006AG 883G b55 C to a125 C TO-8 MDP0002
Connection Diagrams
General Description
The EL2006 EL2006A are high slew rate wide bandwidth high
input impedance high gain and fully differential input opera-
tional amplifiers They exhibit excellent open loop gain charac-
teristics making them suitable for a broad range of high speed
signal processing applications These patented devices have
open loop gains in excess of 86 dB making the EL2006
EL2006A ideal choices for current mode video bandwidth digi-
tal to analog converters of 10 bits or higher resolution The
EL2006’s FET input structure high slew rate and high output
drive capability allow use in applications such as buffers for
flash converter inputs In general the EL2006 EL2006A allow
the user to take relatively high closed loop gains without com-
promising gain accuracy or bandwidth
The EL2006 EL2006A are pin compatible with the popular in-
dustry standard ELH0032 ELH0032A offering comparable
bandwidth and slew rate while offering significant improve-
ments in open loop gain common mode rejection and power
supply rejection
Elantec facilities comply with MIL-I-45208A and are
MIL-STD-1772 certified Elantec’s Military devices comply
with MIL-STD-883 Class B Revision C and are manufactured
in our rigidly controlled ultra-clean facilities in Milpitas Cali-
fornia For additional information on Elantec’s Quality and Re-
liability Assurance Policy and procedures request brochure
QRA-1
Simplified Schematic
Top View
2006 – 1
Manufactured under U S Patent No 4 746 877
2006 – 3
Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these
specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation
1989 Elantec Inc
1 page  
EL2006 EL2006A
High Gain Fast FET Input Op Amp
Applications Information Contd
characteristic is well behaved well beyond the
unity gain frequency so that spurious ringing or
oscillation in the 100 MHZ – 200 MHz region is
avoided Finally we have provided temperature
compensation so that gain and stability are rela-
tively constant over temperature
These improvements are provided in a configura-
tion which is plug compatible with LH0032 and
similar products so that designers can easily up-
grade their system performance without exten-
sive re-design In most cases the EL2006 can be
used to replace LH0032 with no change in exter-
nal compensation
Video DAC Amplifiers
A typical application for the EL2006 is to pro-
vide gain for video signals In the example
shown the EL2006 provides a gain of 2 with set-
tling time around 35 ns to 10 mV
Power Supply Decoupling
The EL2006 EL2006A like most high-speed cir-
cuits is sensitive to layout and stray capacitance
Power supplies should be bypassed as near to
pins 10 and 12 as possible with low inductance
capacitors such as 0 01 mF disc ceramics Com-
pensation components should also be located
close to the appropriate pins to minimize stray
reactances
Input Current
Because the input devices are FETs the input
bias current may be expected to double for each
11 C junction temperature rise This characteris-
tic is plotted in the typical performance charac-
teristics graphs The device will self-heat due to
internal power dissipation after application of
power thus raising the FET junction tempera-
ture 40 C – 60 C above the free-air ambient tem-
perature when supplies are g15V The device
temperature will stabilize within 5 –10 minutes
after application of power and the input bias cur-
rents measured at the time will be indicative of
normal operating currents An additional rise will
occur as power is delivered to a load due to addi-
tional internal power dissipation
Power Dissipation
There is an additional effect on input bias current
as the input voltage is changed The effect com-
mon to all FETs is an avalanche-like increase in
gate current as the FET gate-to-drain voltage is
increased above a critical value depending on
FET geometry and doping levels This effect will
be noted as the input voltage of the EL2006 is
taken below ground potential when the supplies
are g15V All of the effects described here may
be minimized by operating the device with
VS s g15V
These effects are indicated in the typical per-
formance curves
Input Capacitance
The input capacitance to the EL2006 EL2006A
is typically 2 pF and thus may form a significant
time constant with high value resistors For opti-
mum performance the input capacitance to the
inverting input should be compensated by a
small capacitor across the feedback resistor The
value is strongly dependent on layout and closed
loop gain but will typically be in the neighbor-
hood of several picofarads
In the non-inverting configuration it may be ad-
vantageous to bootstrap the case and or a guard
conductor to the inverting input This serves
both to divert leakage currents away from the
non-inverting input and to reduce the effective
input capacitance A unity gain follower so treat-
ed will have an input capacitance under a 1 pF
2006 – 6
5
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet EL2006.PDF ] | |
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