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Rectron - GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER

Numéro de référence EDB103
Description GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER
Fabricant Rectron 
Logo Rectron 





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EDB103 fiche technique
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
GLASS PASSIVATED SUPER FAST
SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
EDB101
THRU
EDB106
FEATURES
* Good for automatic insertion
* Surge overloading rating - 50 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
MECHANICAL DATA
* UL listed the recognized component directory, file #94233
* Epoxy: Device has UL flammability classification 94V-O
DB-1
.255 (6.5)
.245 (6.2)
.350 (8.9)
.300 (7.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.335 (8.51)
.320 (8.12)
.020
(0.5)
.205 (5.2)
.195 (5.0)
.135 (3.4)
.115 (2.9)
.165 (4.2)
.155 (3.9)
.060
(1.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 55oC
Peak Forward Surge Current IFM (surge):8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
EDB101
50
35
50
EDB102
100
70
100
EDB103
150
105
150
EDB104
200
140
200
EDB105
300
210
300
EDB106
400
280
400
UNITS
Volts
Volts
Volts
1.0 Amps
IFSM
CJ
TJ, TSTG
30
15
-65 to + 150
Amps
10 pF
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TA = 25oC
@TA =150oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
VF
IR
trr
EDB101
EDB102 EDB103 EDB104
1.0
5.0
EDB105 EDB106
1.25
50
UNITS
Volts
uAmps
50 nSec
2001-5

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