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PDF HYM72V8025GS-60 Data sheet ( Hoja de datos )
| Número de pieza | HYM72V8025GS-60 | |
| Descripción | 8M x 72-Bit EDO- DRAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HYM72V8025GS-60 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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8M × 72-Bit EDO- DRAM Module
(ECC - Module)
168 pin buffered DIMM Module
HYM 72V8025GS-50/-60
HYM 72V8035GS-50/-60
• 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module
for PC main memory applications
• 1 bank 8 M x 72 organisation
• Optimized for ECC applications
• Hyper Page Mode - EDO Operation
• Performance:
tRAC
tCAC
tAA
tRC
tHPC
RAS Access Time
CAS Access Time
Access Time from Address
Cycle Time
EDO Mode Cycle Time
-50
50 ns
18 ns
30 ns
84 ns
20 ns
-60
60 ns
20 ns
35 ns
104 ns
25 ns
• Single + 3.3V ± 0.3 V supply
• CAS-before-RAS refresh, RAS-only refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• Parallel Presence Detects
• Utilizes nine 8M × 8 -DRAMs and BiCMOS buffers/line drivers VT244A
• Two versions: HYM 72V8035GS with SOJ-components ( 9 mm module thickness)
HYM 72V8025GS with TSOPII-components ( 4 mm module thickness)
• 4048 refresh cycles / 64 ms with 12 / 11 addressing
• Gold contact pad
• Double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
3.97
1 page  
HYM72V8025/35GS-50/-60
8M x 72-ECC EDO-Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage................................................................................................. – 0.5V to 4.6 V
Power dissipation.................................................................................................................... 5,8 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (LVTTL)
Output „H“level voltage ( IOUT = – 2 mA)
VOH
Output low voltage (LVTTL)
Output „L“level voltage ( IOUT = + 2 mA)
VOL
Output high voltage (LVCMOS)
Output „H“level voltage ( IOUT = – 100 µA)
VOH
Output low voltage (LVCMOS)
Output „L“level voltage ( IOUT = + 100 µA)
VOL
Input leakage current
(0 V < VIN < Vcc, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < Vcc)
IO(L)
Average VCC supply current:
ICC1
-50 version
-60 version
Limit Values Unit
min.
max.
2.0 Vcc + 0.3 V
– 0.3
0.8
V
2.4 –
V
Test
Condition
1)
1)
1)
– 0.4 V 1)
Vcc-0.2 –
V 1)
– 0.2 V 1)
– 20 20
µA 1)
– 20 20
µA 1)
–
1260
mA 2) 3) 4)
–
1080
mA
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
ICC2
(RAS = CAS =2.4V, one address change
within 15,6 µs trc)
–
50 mA –
Semiconductor Group
5
5 Page 
L-DIM-168-3
Module package
(dual read-out, single in-line memory module)
133,35
1 10 11
A
85 94 95
40 41
127,35
B
124 125
HYM72V8025/35GS-50/-60
8M x 72-ECC EDO-Module
*)
84
168
6,35
2,0
Detail A
6,35
2,0
Detail B
1,27
1,0 +- 0.5
0,2 +- 0,15
Detail C
*) 4.00 max for modules assembled with TSOPII-packages
9.00 max for modules assembled with SOJ-packages
DM168-3.WMF
preliminary drawing
Semiconductor Group
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HYM72V8025GS-60.PDF ] | |
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