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PDF HYM72V8000GS-50- Data sheet ( Hoja de datos )
| Número de pieza | HYM72V8000GS-50- | |
| Descripción | 8M x 72-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HYM72V8000GS-50- (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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8M × 72-Bit Dynamic RAM Module
(ECC - Module)
HYM 72V8000GS-50/-60
HYM 72V8010GS-50/-60
Preliminary Information
• 8 388 608 words by 72-bit ECC - mode, one bank organization
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 3.3V ± 0.3 V supply
• Low power dissipation
max. 4536 mW active (-50 version)
max. 3888 mW active (-60 version)
CMOS – 108 mW standby
TTL – 180 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• 9 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes nine 8M × 8 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A
• Two versions: HYM 72V8010GS with SOJ-components ( 9 mm module thickness)
HYM 72V8000GS with TSOPII-components ( 4 mm module thickness)
• 4048 refresh cycles / 64 ms with 12 / 11 addressing
• Gold contact pad
• double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
115.95
1 page  
HYM72V8000/10GS-50/-60
8M x 72-ECC Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage................................................................................................. – 0.5V to 4.6 V
Power dissipation.................................................................................................................... 5,8 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (LVTTL)
Output „H“ level voltage (IOUT = – 2 mA)
VOH
Output low voltage (LVTTL)
Output „L“ level voltage (IOUT = + 2 mA)
VOL
Output high voltage (LVCMOS)
Output „H“ level voltage (IOUT = – 100 µA)
VOH
Output low voltage (LVCMOS)
Output „L“ level voltage (IOUT = + 100 µA)
VOL
Input leakage current
(0 V < VIN < Vcc, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < Vcc)
IO(L)
Average VCC supply current:
ICC1
-60 version
-70 version
Limit Values Unit
min.
max.
2.0 Vcc + 0.3 V
– 0.3
0.8
V
2.4 –
V
Test
Condition
1)
1)
1)
– 0.4 V 1)
Vcc-0.2 –
V 1)
– 0.2 V 1)
– 20 20
µA 1)
– 20 20
µA 1)
–
1260
mA 2) 3) 4)
–
1080
mA
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH, one address change)
ICC2
–
50 mA –
Semiconductor Group
5
5 Page 
L-DIM-168-4
Module package
(dual read-out, single in-line memory module)
133,35
HYM72V8000/10GS-50/-60
8M x 72-ECC Module
*)
1 10 11
85 95 96
40 41
127,35
124
125
84
168
Detail of Contacts
*) 4.00 max for modules assembled with TSOPII-packages
9.00 max for modules assembled with SOJ-packages
1.27
1.0 +/- 0.05
DM168-4.WMF
preliminary drawing
Semiconductor Group
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HYM72V8000GS-50-.PDF ] | |
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