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HYM72V4015GS-60 fiches techniques PDF

Siemens - 4M x 72-Bit EDO-DRAM Module

Numéro de référence HYM72V4015GS-60
Description 4M x 72-Bit EDO-DRAM Module
Fabricant Siemens 
Logo Siemens 





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HYM72V4015GS-60 fiche technique
4M × 72-Bit EDO-DRAM Module
(ECC - Module)
168 pin buffered DIMM Module
HYM 72V4005GS-50/-60
HYM 72V4015GS-50/-60
168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module
for PC main memory applications
1 bank 4M x 72 organisation
Optimized for ECC applications
Extended Data Out (EDO)
Performance:
tRAC
tCAC
tAA
tRC
tHPC
RAS Access Time
CAS Access Time
Access Time from Address
Cycle Time
EDO Mode Cycle Time
-50
50 ns
18 ns
30 ns
84 ns
20 ns
-60
60 ns
20 ns
35 ns
104 ns
25 ns
Single + 3.3V (± 0.3V) supply
CAS-before-RAS refresh, RAS-only-refresh
Decoupling capacitors mounted on substrate
All inputs, outputs and clock fully LVTTL & LVCMOS compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs excepts RAS and DQ
Parallel Presence detects
Utilizes eighteen 4M × 4 -DRAMs and four BiCMOS buffers/line drivers
Two versions : HYM 72V4005GS with TSOPII-components (4 mm thickness)
HYM 72V4015GS with SOJ-components (9 mm thickness)
4096 refresh cycles / 64 ms with 12 / 10 addressing
Gold contact pad
Double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
5.96

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