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PDF HYM72V4000GS-60 Data sheet ( Hoja de datos )

Número de pieza HYM72V4000GS-60
Descripción 4M x 72-Bit Dynamic RAM Module
Fabricantes Siemens 
Logotipo Siemens Logotipo



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No Preview Available ! HYM72V4000GS-60 Hoja de datos, Descripción, Manual

4M × 72-Bit Dynamic RAM Module
(ECC - Module )
HYM 72V4000GS-50/-60
HYM 72V4010GS-50/-60
168 pin 4 194 304 words by 72-bit ECC - mode organization
for PC main memory applications
Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
Single + 3.3V (± 0.3V) supply
Low power dissipation
max. 6480 mW active (-50 version)
max. 5832 mW active (-60 version)
CMOS – 108 mW standby
LVTTL – 180 mW standby
CAS-before-RAS refresh, RAS-only-refresh
Decoupling capacitors mounted on substrate
All inputs, outputs and clock fully LVTTL & LVCMOS compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs excepts RAS and DQ
168 pin, dual read-out, Single in-Line Memory Module
Utilizes eighteen 4M × 4 -DRAMs and four BiCMOS 8-bit buffers/line drivers LV244A
Two versions : HYM 72V4000GS with TSOPII-components (4 mm thickness)
HYM 72V4010GS with SOJ-components (9 mm thickness)
4096 refresh cycles / 64 ms with 12 / 10 addressing
Gold contact pad
Double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
11.95

1 page




HYM72V4000GS-60 pdf
HYM72V4000/10GS-50/-60
4M x 72-ECC Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage................................................................................................... – 1 to + 4.6 V
Power dissipation.................................................................................................................... 8.3 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3V
Parameter
Symbol Limit Values
min. max.
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (LVTTL)
Output „H“ voltage level ( IOUT = – 2 mA)
VOH
Output low voltage (LVTTL)
Output „L“voltage level ( IOUT = 2 mA)
VOL
Output high voltage (LVCMOS)
Output „H“voltage level ( IOUT = – 100 µA)
VOH
Output low voltage (LVCMOS)
Output „L“voltage level ( IOUT = 100 µA)
VOL
Input leakage current
(0 V < VIN < Vcc, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < Vcc)
IO(L)
Average VCC supply current:
ICC1
-50 version
-60 version
2.0
– 1.0
2.4
Vcc+0.5
0.8
– 0.4
Vcc-0.2 –
– 0.2
– 20 20
– 20 20
– 1800
– 1620
Unit
V
V
V
V
V
V
µA
µA
mA
mA
Test
Condition
1)
1)
1)
1)
1)
1)
1)
1)
2)3)4)
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS =2.4V,
ICC2
one address change within 15,6 µs trc)
50 mA –
Semiconductor Group
5

5 Page





HYM72V4000GS-60 arduino
L-DIM-168-5
Module package
(dual read-out, single in-line memory module)
133,35
1 10 11
A
85 95 96
40 41
127,35
B
124 125
HYM72V4000/10GS-50/-60
4M x 72-ECC Module
*)
84
168
6,35 6,35
1,27 1,0 +- 0.5
2,0
Detail A
2,0
Detail B
Detail C
0,2 +- 0,15
4Mx72 3.3V
DM168-5.WMF
preliminary drawing
*) 9 mm thickness for modules assembled with SOJ-devices
4mm thickness for modules assembled with TSOPII-devices
Semiconductor Group
11

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