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PDF HYM72V2005GS-50- Data sheet ( Hoja de datos )
| Número de pieza | HYM72V2005GS-50- | |
| Descripción | 2M x 72-Bit EDO-DRAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HYM72V2005GS-50- (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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2M × 72-Bit EDO-DRAM Module
(ECC - Module)
168 pin buffered DIMM Module
HYM 72V2005GS-50/-60
• 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module
for PC main memory applications
• 1 bank 2 M x 72 organisation
• Optimized for ECC applications
• Extended Data Out (EDO)
• Performance:
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60
50 60 ns
18 20 ns
30 35 ns
84 104 ns
20 25 ns
• Single + 3.3V ± 0.3 V supply
• CAS-before-RAS refresh, RAS-only refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• Parallel Presence Detects
• Utilizes nine 2M × 8 -DRAMs and BiCMOS buffers/line drivers
• 2048 refresh cycles / 32 ms with 11 / 10 addressing
• Gold contact pad
• Double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
11.96
1 page  
HYM72V2005GS-50/-60
2M x 72-ECC Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage................................................................................................. – 0.5V to 4.6 V
Power dissipation.................................................................................................................... 5,8 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (LVTTL)
Output „H“level voltage ( IOUT = – 2 mA)
VOH
Output low voltage (LVTTL)
Output „L“level voltage ( IOUT = + 2 mA)
VOL
Output high voltage (LVCMOS)
Output „H“level voltage ( IOUT = – 100 µA)
VOH
Output low voltage (LVCMOS)
Output „L“level voltage ( IOUT = + 100 µA)
VOL
Input leakage current
(0 V < VIN < Vcc, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < Vcc)
IO(L)
Average VCC supply current:
ICC1
-50 version
-60 version
Limit Values Unit
min.
max.
2.0 Vcc + 0.3 V
– 0.3
0.8
V
2.4 –
V
Test
Condition
1)
1)
1)
– 0.4 V 1)
Vcc-0.2 –
V 1)
– 0.2 V 1)
– 20 20
µA 1)
– 20 20
µA 1)
–
1080
mA 2) 3) 4)
– 990 mA
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = 2.4V, one address change
within 15,6 µs trc )
ICC2
–
50 mA –
Semiconductor Group
5
5 Page 
L-DIM-168-22
Module package
(dual read-out, single in-line memory module)
133,35
127,35
HYM72V2005GS-50/-60
2M x 72-ECC Module
9,0
1 10 11
43,18
66,68
A
85 94 95
40 41
B
124 125
84
C
168
6,35
2,0
Detail A
6,35
2,0
Detail B
1,27 1,0 +- 0.5
Detail C
0,2 +- 0,15
DM168-22.WMF
preliminary drawing
Semiconductor Group
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HYM72V2005GS-50-.PDF ] | |
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