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PDF HYM72V1625GS-50- Data sheet ( Hoja de datos )
| Número de pieza | HYM72V1625GS-50- | |
| Descripción | 16M x 72-Bit EDO-DRAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HYM72V1625GS-50- (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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16M × 72-Bit EDO-DRAM Module
(ECC - Module)
168pin buffered DIMM Module
HYM 72V1625GS-50/-60
HYM 72V1635GS-50/-60
• 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module
for PC main memory applications
• 1 bank 16M x 72 organisation
• Optimized for ECC applications
• Extended Data Out ( EDO )
• Performance:
tRAC
tCAC
tAA
tRC
tHPC
RAS Access Time
CAS Access Time
Access Time from Address
Cycle Time
EDO Mode Cycle Time
-50
50 ns
18 ns
30 ns
84 ns
20 ns
-60
60 ns
20 ns
35 ns
104 ns
25 ns
• Single + 3.3V (± 0.3V) supply
• CAS-before-RAS refresh, RAS-only-refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• Parallel Presence detects
• Utilizes eighteen 400mil wide 16M × 4 - EDO- DRAMs and BiCMOS buffers/line drivers
• Two versions : HYM 72V1635GS with TSOPII-components (4 mm thickness)
HYM 72V1625GS with SOJ-components (9 mm thickness)
• 4096 refresh cycles / 64 ms with 12 / 12 addressing
• Gold contact pad
• Double sided module with 38.10 mm (1500 mil) height
Semiconductor Group
1
12.96
1 page  
HYM72V1625/35GS-50/-60
16M x 72-ECC EDO-Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage............................................................................................. – 1.0 V to + 4.6 V
Power dissipation.................................................................................................................... 8.3 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V
Parameter
Symbol Limit Values
min. max.
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (LVTTL)
Output „H“ voltage level ( IOUT = – 2 mA)
VOH
Output low voltage (LVTTL)
Output „L“voltage level ( IOUT = 2 mA)
VOL
Output high voltage (LVCMOS)
Output „H“voltage level ( IOUT = – 100 µA)
VOH
Output low voltage (LVCMOS)
Output „L“voltage level ( IOUT = 100 µA)
VOL
Input leakage current
(0 V < VIN < Vcc, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < Vcc)
IO(L)
Average VCC supply current:
ICC1
-50 version
-60 version
2.0
– 1.0
2.4
Vcc+0.5
0.8
–
– 0.4
Vcc-0.2 –
– 0.2
– 20 20
– 20 20
– 2520
– 2070
Unit
V
V
V
V
V
V
µA
µA
mA
mA
Test
Condition
1)
1)
1)
1)
1)
1)
1)
1)
2) 3) 4)
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS =2.4V,
ICC2
one address change within 15,6 µs trc)
–
50 mA –
Semiconductor Group
5
5 Page 
L-DIM-168-9
Module package
(dual read-out, single in-line memory module)
133,35
HYM72V1625/35GS-50/-60
16M x 72-ECC EDO-Module
*)
1 10 11
A
85 94 95
40 41
127,35
B
124 125
84
168
6,35
2,0
Detail A
6,35
2,0
Detail B
1,27
1,0 +- 0.5
Detail C
0,2 +- 0,15
16Mx72 3.3V
DM168-9.WMF
*) 9 mm max for modules assembled with SOJ-devices
4 mm max. for modules assemlbed with TSOPII-devices
Semiconductor Group
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HYM72V1625GS-50-.PDF ] | |
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