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What is HYM724010GS-50?

This electronic component, produced by the manufacturer "Siemens", performs the same function as "4M x 72-Bit Dynamic RAM Module".


HYM724010GS-50 Datasheet PDF - Siemens

Part Number HYM724010GS-50
Description 4M x 72-Bit Dynamic RAM Module
Manufacturers Siemens 
Logo Siemens Logo 


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4M × 72-Bit Dynamic RAM Module
(ECC - Module )
HYM 724000GS-50/-60
HYM 724010GS-50/-60
Preliminary Information
4 194 304 words by 72-bit ECC - mode organization
Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 9900 mW active (-50 version)
max. 8910 mW active (-60 version)
CMOS – 165 mW standby
TTL – 275 mW standby
CAS-before-RAS refresh, RAS-only-refresh
18 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully TTL compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs excepts RAS and DQ
168 pin, dual read-out, Single in-Line Memory Module
Utilizes eighteen 4M × 4 -DRAMs in TSOPII-packages
and four BiCMOS 8-bit buffers/line drivers 74ABT244
Two versions : HYM 724000GS with TSOPII-components (4.06 mm thickness)
HYM 724010GS with SOJ-components (8.89 mm thickness)
4096 refresh cycles / 64 ms with 12 / 10 addressing
Gold contact pad
double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
11.95

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HYM724010GS-50 equivalent
HYM724000/10GS-50/-60
4M x 72 ECC- Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 12,60 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current:
ICC1
-50 version
-60 version
Limit Values
min.
max.
2.4 5.5
– 1.0
0.8
2.4 –
– 0.4
– 10 10
– 10 10
– 1800
– 1620
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
Average VCC supply current during RAS
only refresh cycles:
ICC3
-50 version
-60 version
50
1800
16
(RAS cycling, CAS = VIH , tRC = tRC min.)
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA
mA –
mA 2) 4)
mA
Semiconductor Group
5


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Part Details

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Information Total 11 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
HYM724010GS-50The function is 4M x 72-Bit Dynamic RAM Module. SiemensSiemens

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