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PDF HYM724000GS-50- Data sheet ( Hoja de datos )
| Número de pieza | HYM724000GS-50- | |
| Descripción | 4M x 72-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HYM724000GS-50- (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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4M × 72-Bit Dynamic RAM Module
(ECC - Module )
HYM 724000GS-50/-60
HYM 724010GS-50/-60
Preliminary Information
• 4 194 304 words by 72-bit ECC - mode organization
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 9900 mW active (-50 version)
max. 8910 mW active (-60 version)
CMOS – 165 mW standby
TTL – 275 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• 18 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes eighteen 4M × 4 -DRAMs in TSOPII-packages
and four BiCMOS 8-bit buffers/line drivers 74ABT244
• Two versions : HYM 724000GS with TSOPII-components (4.06 mm thickness)
HYM 724010GS with SOJ-components (8.89 mm thickness)
• 4096 refresh cycles / 64 ms with 12 / 10 addressing
• Gold contact pad
• double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
11.95
1 page  
HYM724000/10GS-50/-60
4M x 72 ECC- Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 12,60 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current:
ICC1
-50 version
-60 version
Limit Values
min.
max.
2.4 5.5
– 1.0
0.8
2.4 –
– 0.4
– 10 10
– 10 10
– 1800
– 1620
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
Average VCC supply current during RAS
only refresh cycles:
ICC3
-50 version
-60 version
–
–
–
50
1800
16
(RAS cycling, CAS = VIH , tRC = tRC min.)
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA
mA –
mA 2) 4)
mA
Semiconductor Group
5
5 Page 
L-DIM-168-6
Module package
(dual read-out, single in-line memory module)
133,35
1 10 11
85 95 96
40 41
127,35
124 125
HYM724000/10GS-50/-60
4M x 72 ECC- Module
*)
84
168
Detail of Contacts
1.27 1.0 +/- 0.05
4Mx72 5V
DM168-6.WMF
preliminary drawing
*) 9 mm thickness for modules assembled with SOJ-devices
4mm thickness for modules assembled with TSOPII-devices
Semiconductor Group
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HYM724000GS-50-.PDF ] | |
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