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PDF HYM721000GS-70 Data sheet ( Hoja de datos )
| Número de pieza | HYM721000GS-70 | |
| Descripción | 1M x 72-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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1M × 72-Bit Dynamic RAM Module
(ECC - Module)
HYM 721000GS-60/-70
HYM 721010GS-60/-70
Advanced Information
• 1 048 576 words by 72-bit ECC - mode organization
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 10890 mW active (-60 version)
max. 9900 mW active (-70 version)
CMOS – 451 mW standby
TTL – 550 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• 18 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes eighteen 1M × 4 -DRAMs in TSOPII-packages
and four BiCMOS 8-bit buffers/line drivers 74ABT244
• Two versions: HYM 721000GS with TSOPII-components (4.06 mm module thickness)
HYM 721010GS with SOJ-components (8.89 mm module thickness)
• 1024 refresh cycles / 16 ms
• Gold contact pad
• double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
12.95
1 page  
HYM721000/10GS-60/-70
1M x 72 ECC- Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 13,86 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics 1)
TA = 0 to 70 °C; VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current:
ICC1
HYM 721000/10GS-60
HYM 721000/10GS-70
Limit Values
min.
max.
2.4 5.5
– 1.0
0.8
2.4 –
– 0.4
– 10 10
– 10 10
– 1980
– 1800
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
Average VCC supply current during RAS
only refresh cycles:
ICC3
HYM 721000/10GS-60
HYM 721000/10GS-70
–
–
–
50
1980
1800
(RAS cycling, CAS = VIH , tRC = tRC min.)
Unit Test
Condition
V–
V–
V–
V–
µA –
µA –
mA 2), 3)
mA
mA –
2)
mA
mA
Semiconductor Group
5
5 Page 
L-DIM-168-2
Module package
(dual read-out, single in-line memory module)
HYM721000/10GS-60/-70
1M x 72 ECC- Module
GLD05861
Semiconductor Group
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HYM721000GS-70.PDF ] | |
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