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HYM721000GS-60- fiches techniques PDF

Siemens - 1M x 72-Bit Dynamic RAM Module

Numéro de référence HYM721000GS-60-
Description 1M x 72-Bit Dynamic RAM Module
Fabricant Siemens 
Logo Siemens 





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HYM721000GS-60- fiche technique
1M × 72-Bit Dynamic RAM Module
(ECC - Module)
HYM 721000GS-60/-70
HYM 721010GS-60/-70
Advanced Information
1 048 576 words by 72-bit ECC - mode organization
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 10890 mW active (-60 version)
max. 9900 mW active (-70 version)
CMOS – 451 mW standby
TTL – 550 mW standby
CAS-before-RAS refresh, RAS-only-refresh
18 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully TTL compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs excepts RAS and DQ
168 pin, dual read-out, Single in-Line Memory Module
Utilizes eighteen 1M × 4 -DRAMs in TSOPII-packages
and four BiCMOS 8-bit buffers/line drivers 74ABT244
Two versions: HYM 721000GS with TSOPII-components (4.06 mm module thickness)
HYM 721010GS with SOJ-components (8.89 mm module thickness)
1024 refresh cycles / 16 ms
Gold contact pad
double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
12.95

PagesPages 11
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